2SC1945 MITSUBISHI | Alldatasheet
Document overview
- Manufacturer or author: サンオフィス（株） Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
DESCRIPTION
2SC1945 is a silicon NPN epitaxial planar type transistor designed OUTLINE DRAWING _ Dimessionsin mm for RF power amplifiers on HF band mobile radio applications. 9140.7, 3.60.2 FEATURES : ees © High power gain: Gpe 2 14.508 FI L i @Vec¢ =12V, Po = 14W, f = 27MHz 3 LEE | ® © Emitter ballasted construction for high reliability and good e SN : performances. |. © 0-220 package similarly is combinient for mounting. Pai © Ability of withstanding infinite load VSWR when operated ° __| s: as at Voc = 16V, Po = 18W, f= 27MHz. OM cto4 2 aaa S| x = 0.15 APPLICATION 2 3 > 10 to 14 watts output power class AB amplifiers applications in S| 8 Ht HF band. = Vr oe +010 ae 28 atosto1e 3.5MAX ¢ $ PIN: o 8 ® BASE @ EMITTER (FIN) @ COLLectoR T-30E 9 ® FIN emiTTER) ABSOLUTE MAXIMUM RATINGS (1c=25'C uniess otherwise specified) [Svmbot TO Parameser Conair Ratings nit | Vos | collectortobasevoiege Pw [eso | enitwomewine [ic [eomcwaren cc Po Collecter dissipation a = [TeswseSSSSCi Lc | Tstg | Storasetemoerawre 8 tso Te Thermal resistance Note, Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (1c =25°C uniess otherwise specified) . Test cond mb rameter est condition “oe ™ “es [min [tye Mex | | Wencse| Faiwctwomoename df esinmeee | | | (eR 080 | Collector to base breakdown voltage Tig= ima. 1e=0 Ce] | |v] Viemozo| Callector wo evita breakdown vlane o=l0mA, Roe =™ cr ‘esa | Covector vio earent Veo=i0V Te =0 re es [ice | bctowerseurntein® Neem tome we | Lo [oo [| Note. # Pulse test, Pw=150ys. duty=5%. Above parameters, ratings. imits and conditions are subject to change NOV. ' 97 MITSUBISHI are MTSUBS!
MITSUBISHI RF POWER TRANSISTOR 2S8C1945 NPN EPITAXIAL PLANAR TYPE EEE TEST CIRCUIT aii) sp,et,1p | (PF Zout=509 Zn=s09 80.77.17 to 10pF to 110pF} 8D 80 ST 6T RFC we to 110pF to 110pF had ‘SOpF 320 to 110pF) 1, oF Cy: O.01uF, 2200pF, 100pF, 10pF in parallel Cz: 10pF, 30pF, 100pF, 330pF, 2200p F, 10uF in paratlel Ce Notes: All coils are mage from 1.Omnm@ sive plated copper wire + Coil eimensions in millemetor > Inner diameter of coil +Voo T: Turn number of coil Po Pitch of cil TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION VS. COLLECTOR CURRENT VS. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE ‘Co, BES a 3 eee TI z \\ 2 Leer rT TTT 2 | \\ : Ue oe
3 NX | || el) aa
© TINA T] saeeseenES ote owe SY titi ti tt tty | [) 40 80 120 160 200 0 4 8 12 16 20 AMBIENT TEMPERATURE Ta (°C) COLLECTOR TO EMITTER VOLTAGE Vce {V) bc CURRENT GAIN Vs. COLLECTOR TO EMITTER BREAKDOWN . COLLECTOR CURRENT BASE TO EMITTER RESISTANCE 10 “ 14 0 een] z 120 HE ec cot oe £ ow PITT TT Ta 32 of tN TTT TTT 2 60 J ee So LT TIN TIT TT ae) Pte Es =H AHH 2 pert TT TT gy oo TINT TT ee ee s oT oF ot LTT TT PNA oT 2 g LT TTT TTA . aL TT Ty TT ott TTT Ti COLLECTOR CURRENT Ic (A) BASE TO EMITTER. RESISTANCE Ree (2) NOV." 97 ate TUBS! '
MITSUBISHI RF POWER TRANSISTOR 2sc1945 NPN EPITAXIAL PLANAR TYPE NPN EPITAXIAL PLANAR TYPE OUTPUT POWER, COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR EFFICIENCY _ COLLECTOR TO BASE VOLTAGE VS. INPUT POWER oe a “oe "00 S sol | 1] PT fre imne f=27MH2 = got TT fier tet topo |G zoom : = oe = ot 1) TP Te Te 2 preter rt. 3 en Se : re “3 Sse - “COATT erry § 5 mp) Pee s |7i li yi {Titi § Bp 5 “TTT Trrrry® s 5 5 sat itl tit 2 ererorececn, : a CEPT” 3 OUTPUT POWER VS. COLLECTOR SUPPLY VOLTAGE " YA © Lae Ae 3 | Lae Zea COLLECTOR SUPPLY VOLTAGE Vc (V) NOV." 97