C1845 DGNJDZ | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA IB Base Current 10 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=120V, IE=0 50 nA IEBO Emitter Cut-off Current VEB=5V, IC=0 50 nA hFE1 hFE2 DC Current Gain VCE=6V, IC=0.1mA VCE=6V, IC=1mA 150 200 580 600 1200 V BE (on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.55 0.59 0.65 V VBE (sat) Collector-Emitter Saturation Voltage I C=10mA, IB=1mA 0.07 0.3 V fT Current Gain Bandwidth Product V CE=6V, IC=1mA 50 110 MHz Cob Output Capacitance VCB=30V, IE=0, f=1MHz 1.6 2.5 pF NL Noise Level 25 40 mV Classification P F E U hFE2 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200 C1845 Audio Frequency Low Noise Amplifier
- Complement to A992 1. Emitter 2. Collector 3. Base TO-921 DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. 1/5 www.dgnjdz.com All data s heet.com
Figure 7. Collector Current vs. Base-Emitter Voltage Figure 8. Power Derating
0.46 ±0.10 1.27TYP (R2.29) 3.86MAX [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 3.60 ±0.20 14.47 ±0.40 1.02 ±0.10 (0.25) 4.58 ±0.20 4.58+0.25 –0.15 0.38+0.10 –0.05 0.38+0.10 –0.05 TO-92 Package Dimensions Dimensions in Millimeters Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com All data s heet.com