ST2SC1740 SEMTECH_ELEC | Alldatasheet
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Dated : 07/12/2002 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 2SC1740 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups Q, R, S and E. according to its DC current gain. On special request, thes e transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage V CBO 60 V Collector Emitter Voltage V CEO 50 V Emitter Base Voltage V EBO 5 V Collector Current I C 150 mA Power Dissipation P tot 300 mW Junction Temperature T j 150 OC Storage Temperature Range T S -55 to +150 OC
Dated : 07/12/2002 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 2SC1740 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at V CE=6V, IC=1mA Q R S E hFE hFE hFE hFE 120 180 270 390 270 390 560 820 Collector Base Breakdown Voltage at I C=50μA V(BR)CBO 60 - - V Collector Emitter Breakdown Voltage at I C=1mA V(BR)CEO 50 - - V Emitter Base Breakdown Voltage at I E=50μA V(BR)EBO 5 - - V Collector Cutoff Current at V CB=60V ICBO - - 0.1 μA Emitter Cutoff Current at V EB=5V IEBO - - 0.1 μA Collector Saturation Voltage at I C=50mA, IB=5mA VCE(sat) - - 0.4 V Gain Bandwidth Product at V CE=12V, IC=2mA fT - 180 - MHz Output Capacitance at V CB=12V, f=1MHz COB - 2 3.5 pF