2SC1675 SEMTECH | Alldatasheet
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NPN Silicon Epitaxial Planar Transistor FM/AM RF AMP, MIX, CONV, OSC, IF The transistor is subdivided into three groups, R, O, Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g FEATURES: Collector-Base Voltage: VCEO=30V High Current Gain Bandwidth Product: fT=300MHz (TYP.) Low Collector Capacitance: COB=2.0pF (TYP.) Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) Absolute Maximum Ratings (T a = 25oC) tinU eulaV lobmyS V egatloV esaB-rotcelloC CBO 50 V V egatloV rettimE-rotcelloC CEO 30 V V egatloV esaB-rettimE EBO 5 V I tnerruC rotcelloC C 50 mA P noitapissiD rewoP rotcelloC tot 250 mW T erutarepmeT noitcnuJ j 150 ? T erutarepmeT egarotS S -55 to +150 ? G S P FORM A IS AVAILABLE РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru
Dated : 19/12/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® ST 2SC1675 Characteristics at Ta=25 OC Symbol Min. Typ. Max. Unit DC Current Gain a t VCE=6V, IC=1mA R O Y hFE hFE hFE 120 140 240 Collector-Emitter Saturation Voltage a t IC=10mA, IB=1mA VCE(sat) - 0.08 0.3 V Base–Emitter On Voltage a t VCE=6V, IC=1mA VBE(on) - 0.67 0.75 V Collector-Base Breakdown Voltage a t IC=10µA, IE=0 BVCBO 50 - - V Collector-Emitter Breakdown Voltage a t IC=5mA, IB=0 BVCEO 30 - - V Emitter-Base Breakdown Voltage a t IE=10µA, IC=0 BVEBO 5 - - V Collector Cut-off Current a t VCB=50V, IE=0 ICBO - - 0.1 µA Emitter Cut-off Current a t VEB=5V, IC=0 IEBO - - 0.1 µA Current Gain Bandwidth Product a t VCE=6V,IC=1mA f T 150 300 - MHz Output Capacitance a t V CB=6V, IE=0, f=1MHz Cob - 2.0 2.5 pF G S P FORM A IS AVAILABLE