2SC1674 TGS | Alldatasheet

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Technical content

TO-92 Plastic-Encapsulate Transistors 2SC1674 TRANSISTOR (NPN)

FEATURES

z High current gain bandwidth product fT=600MHz(Typ.), z High power gain GPE=22dB at f=100MHz MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Power dissipation 250 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO I C= 1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 4 V Collector cut-off current ICBO V CB= 30V, IE=0 0.1 μA Emitter cut-off current IEBO V EB=3V, IC=0 0.1 μA DC current gain hFE V CE=6 V, IC= 1mA 40 180 Collector-emitter saturation voltage VCE(sat) I C=10mA, IB= 1mA 0.3 V Base-emitter voltage VBE(ON) V CE=6V, IC= 1mA 0.65 0.77 V Transition frequency fT VCE=6 V, IC= 1mA 400 MHz Collector output capacitance Cob VCE=6V,IE=0, f =1MHz 1.3 pF CLASSIFICATION OF h FE Rank Y GR BL Range 40-80 60-120 90-180 1 2 3 TO-92 1.EMITTER

2 COLLECTOR

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