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0.02 A , 30 V
NPN Plastic Encapsulated Transistor Elektronische Bauelemente 21-Feb-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A CE K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification CLASSIFICATION OF h FE Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BL Range 40~80 60~120 90~180 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V CBO 30 V Collector to Emitter Voltage V CEO 20 V Emitter to Base Voltage V EBO 4 V Collector Current - Continuous I C 20 mA Collector Power Dissipation P C 250 mW Thermal Resistance From Junction To Ambient R θJA 500 °C / W Junction, Storage Temperature T J, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V (BR)CBO 30 - - V I C=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V (BR)CEO 20 - - V I C=1mA, IB=0 Emitter to Base Breakdown Voltage V (BR)EBO 4 - - V I E=0.1mA, IC=0 Collector Cut – Off Current I CBO - - 0.1 μA V CB=30V, IE=0 Collector Cut – Off Current I CEO - - 0.1 μA V CE=20V, IB=0 Emitter Cut – Off Current I EBO - - 0.1 μA V EB=3V, IC=0 DC Current Gain h FE 40 - 180 V CE=6V, IC=1mA Collector to Emitter Saturation Voltage V CE(sat) - - 0.3 V I C=10mA, IB=1mA Base to Emitter voltage V BE 0.65 - 0.77 V V CE=6V, IC=1mA Transition Frequency f T 400 - - MHz V CE=6V, IC=1mA Collector Output Capacitance C ob - - 1.3 pF V CB=6V, IE=0, f=1MHz Emitter Collector Base TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76