C147A DIGITRON | Alldatasheet

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phone +1.908.245-7200 C147A-C147PB HIGH POWER SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak reverse voltage VDRM

1 V RRM

1 V RSM

1 Part number

TJ = -40° to 125°C TJ = -40°C to 125°C TJ = 125°C Units C147A 100 100 150 V C147B 200 200 300 V C147C 300 300 400 V C147D 400 400 500 V C147E 500 500 600 V C147M 600 600 720 V C147S 700 700 840 V C147N 800 800 960 V C147T 900 900 1080 V C147P 1000 1000 1200 V C147PA 1100 1100 1320 V C147PB 1200 1200 1440 V 1: Pulse width: half sine wave waveform, 10 msec. Rating Symbol Value Unit RMS on-state current (All conduction angles) IT(RMS) 63 A Average on-state current IT(AV) Figures 2 and 3 Critical rate of rise of on-state current (non-repetitive) Switching from 1200V Switching from 600V di/dt 100 200 A/µs Peak one cycle surge (non-repetitive) on-state current 60Hz 50Hz I TSM 1000 910 A Fusing Times ≥ 8.3ms Times ≥ 1.5ms I2t 4150 2850 A2s Peak gate power dissipation for 150µs PGM 100 W Average gate power dissipation PG(AV) 2 W Storage temperature Tstg -40 to 150 °C Operating temperature TJ -40 to 125 °C Maximum stud torque 3-4 N-m di/dt ratings for conditions of VDRM stated above; 20V, 20Ω gate trigger source with 0.5µsec short circuit trigger current rise time. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116

phone +1.908.245-7200 C147A-C147PB HIGH POWER SILICON CONTROLLED RECTIFIER

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Max Units Test Condition Peak off-state and reverse current TJ = -40 to 125°C VDRM = VRRM = C147A C147B C147C C147D C147E C147M C147S C147N C147T C147P C147PA C147PB I DRM, IRRM 6.5 mA

100 Volts peak

200 Volts peak

300 Volts peak

400 Volts peak

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1200 Volts peak

  • 150 TC = 25°C, VD = 12Vdc, RL = 12ohms DC gate trigger current IGT - 300 mAdc TC = -40°C, VD = 12Vdc, RL = 12ohms - 3 TC = 25°C, VD = 12Vdc, RL = 12ohms - 3.5 TC = -40°C, VD = 12Vdc, Rl = 12ohms DC gate trigger voltage VGT 0.25 - Vdc TC = 125°C, rated VDRM, RL = 1000ohms Peak on-state voltage VTM - 3 V TC = 25°C, ITM = 500A(pk), 1ms wide pulse, duty cycle ≤ 1% Holding current IH - 250 mAdc TC = 25°C anode supply = 24Vdc, gate supply = 10V/20ohms. Initial forward pulse = 2A, 0.1 ms to 10 ms wide Critical rate of rise of off-state voltage (higher values may cause device switching) dv/dt 200 - V/µs TC = 125°C, rated VDRM, using linear exponential rising waveform, gate open circuited Exponential dv/dt = VDRM / т) (0.632) Thermal resistance RӨJC - 0.35 °C/W Junction to case Typical turn-off time tq 125 µsec 1) TJ = 125°C 2) ITM = 150A, peak 3) VR = 50V, min 4) VDRM (reapplied) 5) Rate-of-rise of reapplied off state voltage = 20V/µsec (linear) 6) Commutation di/dt = 5A/µsec 7) Repetition rate = 1PPS 8) Gate bias during turn-off interval = 0V, 100Ω sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116

phone +1.908.245-7200 C147A-C147PB HIGH POWER SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-48 Marking Alpha-numeric Pin out See below TO-48 Inches Millimeters Min Max Min Max A 0.604 0.614 15.340 15.600 B 0.551 0.559 14.000 14.200 C 1.050 1.190 2.670 30.230 F 0.135 0.160 3.430 4.060 H - 0.265 - 6.730 J 0.420 0.455 10.670 11.560 K 0.620 0.670 15.750 17.020 L 0.300 0.350 7.620 8.890 Q 0.055 0.085 1.400 2.160 T 0.501 0.505 12.730 12.830 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116

phone +1.908.245-7200 C147A-C147PB HIGH POWER SILICON CONTROLLED RECTIFIER sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116

phone +1.908.245-7200 C147A-C147PB HIGH POWER SILICON CONTROLLED RECTIFIER sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20130116