BZX85_12 VISHAY | Alldatasheet

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www.vishay.com Vishay Semiconductors Rev. 2.1, 22-Nov-11 1 Document Number: 85607 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Zener Diodes

FEATURES

  • Silicon planar power Zener diodes
  • For use in stabilizing and clipping circuits with high power rating
  • The Zener voltages are graded according to the international E 24 standard. Replace suffix “C” with “B” for ± 2 % tolerance
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

  • Voltage stabilization PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.7 to 100 V Test current IZT 2.7 to 80 mA VZ specification Pulse current Int. construction Single

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZX85-series BZX85-seri es-TR 5000 (52 mm tape on 13" reel) 25 000/box BZX85-series BZ X85-series-TAP 5000 per ammopack (52 mm tape) 25 000/box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS DO-41 310 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Ptot 1300 mW Zener current See Table “Electrical characteristics” Junction to ambient air Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature R thJA 110 K/W Junction temperature Tj 175 °C Storage temperature range Tstg - 55 to + 175 °C

www.vishay.com Vishay Semiconductors Rev. 2.1, 22-Nov-11 2 Document Number: 85607 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Measured with pulses tp = 5 ms (2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case (3) Measured with f = 1 kHz ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE (1) TEST CURRENT REVERSE LAEKAGE CURRENT DYNAMIC RESISTANCE (3) TEMPERATURE COEFFICIENT OF ZENER VOLTAGE ADMISSIBLE ZENER CURRENT (2) VZ at IZT1 IZT1 IZT2 IR at VR ZZ at IZT1 ZZK at IZT2 αVZ at IZT1 IZ V mA μA V Ω %/°C mA BZX85C4V3 4 4.3 4.6 50 1 < 3 1 < 13 < 500 - 0.05 0.01 250 BZX85C4V7 4.4 4.7 5 45 1 < 3 1 < 13 < 600 - 0.03 0.04 215 BZX85C5V6 5.2 5.6 6 45 1 < 1 2 < 7 < 400 0 0.045 190 BZX85C30 28 30 32 8 0.25 < 0.5 22 < 30 < 1000 0.06 0.095 36 BZX85C33 31 33 35 8 0.25 < 0.5 24 < 35 < 1000 0.06 0.095 33 BZX85C36 34 36 38 8 0.25 < 0.5 27 < 40 < 1000 0.06 0.095 30 BZX85C39 37 39 41 6 0.25 < 0.5 30 < 50 < 1000 0.06 0.095 28 BZX85C43 40 43 46 6 0.25 < 0.5 33 < 50 < 1000 0.06 0.095 26 BZX85C47 44 47 50 4 0.25 < 0.5 36 < 90 < 1500 0.06 0.095 23 BZX85C51 48 51 54 4 0.25 < 0.5 39 < 115 < 1500 0.06 0.095 21 BZX85C56 52 56 60 4 0.25 < 0.5 43 < 120 < 2000 0.06 0.095 19 BZX85C62 58 62 66 4 0.25 < 0.5 47 < 125 < 2000 0.06 0.095 16 BZX85C68 64 68 72 4 0.25 < 0.5 51 < 130 < 2000 0.055 0.095 15 BZX85C75 70 75 80 4 0.25 < 0.5 56 < 135 < 2000 0.055 0.095 14

www.vishay.com Vishay Semiconductors Rev. 2.1, 22-Nov-11 3 Document Number: 85607 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Measured with pulses tp = 5 ms (2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case (3) Measured with f = 1 kHz ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE (1) TEST CURRENT REVERSE LAEKAGE CURRENT DYNAMIC RESISTANCE (3) TEMPERATURE COEFFICIENT OF ZENER VOLTAGE ADMISSIBLE ZENER CURRENT (2) VZ at IZT1 IZT1 IZT2 IR at VR ZZ at IZT1 ZZK at IZT2 αVZ at IZT1 IZ V mA μA V Ω %/°C mA BZX85B3V0 2.94 3 3.06 80 1 < 100 1 < 20 < 400 - 0.08 - 0.05 330 BZX85B5V6 5.49 5.6 5.71 45 1 < 1 2 < 7 < 400 0 0.045 190 BZX85B51 50 51 52 4 0.25 < 0.5 39 < 115 < 1500 0.06 0.095 21

www.vishay.com Vishay Semiconductors Rev. 2.1, 22-Nov-11 4 Document Number: 85607 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Pulse Thermal Resistance vs. Pulse Duration Fig. 2 - Dynamic Resistance vs. Zener Current Fig. 3 - Dynamic Resistance vs. Zener Current Fig. 4 - Thermal Resistance vs. Lead Length Fig. 5 - Admissible Power Dissipation vs. Ambient Temperature Fig. 6 - Dynamic Resistance vs. Zener Current 10-5 10-4 10-3 10-2 10-1 11 0 s 103 102 °C/W rthA tP 18458 tP v = T PI ___ T tP 0.5 0.2 0.1 0.05 0.02 0.01 0.1 2 11 0 mA 103 102 Ω rzj IZ 18459 5432 5 43 437 1 2 10 100 mA 100 Ω rzj IZ 18460 5432 5 43 7 43 01 0 20 30 mm 200 100 °C/W RthA lead length 18461 max. typ. 01 0 0 200 °C W P tot Tamb 18462 1 2 10 100 mA 103 102 Ω rzj IZ 18463 5432 5 43 7 7 5V1 4V3 7V5 6V2

www.vishay.com Vishay Semiconductors Rev. 2.1, 22-Nov-11 5 Document Number: 85607 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Breakdown Characteristics Fig. 8 - Breakdown Characteristics PACKAGE DIMENSIONS in millimeters (inches): DO-41 01234567 8 9 1 01 11 21 31 41 5 V 120 160 200 240 mA IZ VZ Tj = 25 °C4V73V9 5V6 6V8 8V2 18456 0 5 1 0 1 5 2 02 53 03 5 40 45 50 V mA I Z VZ 18457 Tj = 25 °C15 18 94 9368 Cathode identification 0.86 (0.034) max. 2.6 (0.102) max.

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