C122 SSDI | Alldatasheet
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ee silicon Controlled Rectifiers File Number 1173 C122 Series 8-A Silicon Controlled Rectifiers i For Power Switching, Power Control Features: = High dv/dt capability TERMINAL DESIGNATIONS «= Glass-passivated chip = Shorted-emitter gate-cathode construction . GATE = Low thermal resistance — ——— Atte ts F ‘TOP VIEW ‘CATHODE ‘The RCA-C122 series types are medium-power silicon con- 925-3998 trolled rectifiers designed for switching ac and de currents. These devices can switch from the off-state to the on-state JEDEC TO-220AB when both the anode and gate voltages are positive. Nega~ tive anode voltages make these devices revert to the block- . ing state regardless of gate-voltage polarity. ‘The TO-220AB package provides easy package mounting and low thermal resistance, allowing operation at high case temperatures and permitting reduced heat-sink size. These SCR's can be used in lighting and motorspeed controls and power-switching systems. C122F C122 C1228 C1226 C1220 C1226 122M . Vanows Vonouth sssssscsessesseescneeseesseseeeeeees 60 100 200 900 400 500 600 v | i Ire (To= 78°C, 02 FBO") oossesssesssssnseeennneey 8 A | For one full cycle of applied GO-HZ oe eeseecesseeeeeeeeeees 100 — A For more than one full cycle of applied di/dt | Vo= Vorou * ' Tar = 80 MA, t= 0.5 US wc ceeeeeeceeceereeeeeeeeenne —— $$ 100 —_____—_ As at T= -65 to 100°C, t21108.3 MS ecescccsecesseesseeseeneeterersees 40 ________ As t Pout ((0F 10 19 MAX) seeseececeeceseeseeseeesseeess 16 Ww | Tg resecevsssesseesueeseseneecsecsneenserererarens 5 to 150 “During soldering for 10 s maximum 9. AThese values do not apply if there is a posite gate signal, Gate must be open or negatively biased. sAny values of peak gato current or peak gate voltage which result in equal or lower power are permissible. ‘ ee
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ELECTRICAL CHARACTERISTICS
At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (To) [ums FOR ALL TYPES CHARACTERISTIC Except as Specified : "Min." “Typ. [Max. | ; 'pom oF !Rom Vp = VproM or Vr = Varom Tc = 100°C T ip=16A, To = +25°C - 1.45 1.83 v 'or Vp = 12 V (DC), Ry = 302 Te t26°C elec cee e ee ee nee ener eeceee - 19 5 Vot Vp = 12V (001, Ry = 302 B (cleh - 10 15 For other case temperatures |<a—— See Fig. 7 ——o>| tHo . dv/dt Vp= Vonow Exponential voltage rise Vius Te = +100°C (See Fig. 12) Yo= Vprom ip =45A,i7=2A IgT = 80 mA, 0.1 us rise time To +26°C (See Fig. 10) C vy, =VpRomiT=2Atp= 50us * : dit = 200 Wis dildt = 210 Aus i IgT = 200 mA at ton, Te = +75°C (See Fig. 13) : [Fac CC‘ «dT fT | [fom . ! we jq{cOMBueTiON aNcLe: 360° BeAr g EQRDUCTION ANOLE: tO neo as HHT SST HLA ERE ‘wou
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! 3875081 G E SOLID STATE o1E 17712 0D T2655 Silicon Controlled Rectifiers C122 Series : Fig. 9 — Critical rate of rise of off-state voltage Fig. 10 — Gate-controlled turn-on time vs. gate ' vs, case temperature. trigger current. | Z : atetetaiatenenaiiaiaiaieiattatal 7 i pen > tt 7 | tw “ 63% OF vp osty /t + - ay peony Tene secs-336en3 Fig. 11 — Rate of change of on-state current with Fig. 12 — Rate of rise of off-state voltage with time (detining difdt). time (defining critical dv/dt). | tw ae Yon a {%im— Ve i 1 al kote toy - en | Loewe Fo, 19 ~ Relationship betwoon instantaneous on Tate current and voltage, showing reference points for measurement of circuit-commutated turn-off time (te). ! 7 a