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 Advanced high performance in- -package Doherty  Greater negative gate- -source voltage range for improved Class C operation  Designed for digital predistortion error correction systems Document Number: A2V09H400- -04S Rev. 2, 02/2021 NXP Semiconductors Technical Data 720–960 MHz, 102 W AVG., 48 V AIRFAST RF POWER LDMOS TRANSISTOR A2V09H400- -04S NI- -780S- -4L (Top View) RFoutA/VDSA31

42 RFoutB/VDSB

Figure 1. Pin Connections

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available athttp://www.nxp.com
  3. Each side of device measured separately.

Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) Pout = 102 W Avg., f = 920 MHz, Single- -Carrier W- -CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @5M H zO f f s e t . Table 5. Ordering Information

  1. Part internally input matched.
  2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W- -CDMA single- -carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

Figure 2. A2V09H400- -04S Test Circuit Component Layout Table 6. A2V09H400- -04S Test Circuit Component Designations and Values

Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane. Table 8. Carrier Side Load Pull Performance — Maximum Efficiency Tuning (1) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane.

Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane. Table 10. Peaking Side Load Pull Performance — Maximum Efficiency Tuning (1) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane.

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software  Electromigration MTTF Calculator  .s2p File Development Tools  Printed Circuit Boards

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2019  Initial release of data sheet 1 Jan. 2021  Added 700 MHz performance table with corresponding measured data, p. 1 2 Feb. 2021  Tables 7–10, Load Pull Performance: added Carrier Side and Peaking Side load pull performance tables showing P3dB performance across the 758–821 MHz band, pp. 5–6

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