C106DB FS | Alldatasheet
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Technical content
- 02. 06 1/2Revision No : 0 Silicon Planar PNPN Thyristor (4A SCR)
DESCRIPTION
Thyristor in a TO-252 Package.
FEATURES
The consumption level provide reliable applications, such as temperature, lighting, speed, etc.
APPLICATIONS
Applied to high Voltage control circuit. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Gate Cathode Symbol Anode Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Test Conditions Rating Unit Repetitive peak off-state voltages VDRM， VRRM RGK=1K TC=-40~110℃ C106DB C106DD C106DM 200 400 600 V RMS on-state current IT(RMS) TC=80℃ A 4 Average on-state current IT(AV) TC=80℃ A 5 5 . 2 Non-repetitive peak on-state current ITSM 1/2 Cycle, Sine Wave,60Hz, TJ=110℃ 20 A t I g n i s u f r o f 2 A 5 6 . 1 s m 3 . 8 = t t 2S Peak gate power PGM T C=80℃ W m 0 0 5 Peak Average power PG(AV) TC=80℃ W m 0 0 1 Peak gate current IGM TC=80℃ A 2 . 0 Junction Temperature Tj -40～+110 ℃ Storage Temperature Range Tstg -40～+150 ℃ Parameter Symbol Test Conditions Min Typ Max Unit Repetitive peak off-state current IDRM, IRRM VAK=Rated V DRM or VRRM RGK=1KΩ Tc =25℃ 10 μA Tc=110℃ 100 On-state voltage VTM I TM=4.0A tp=380uS 2.2 V Gate trigger current I GT VAK=6.0Vdc RL=100Ω Tc =25℃ 15 200 μA Tc=-40℃ 35 500 Gate trigger voltage V GT VAK=6.0Vdc RL=100Ω Tc =25℃ 0.4 0.60 0.80 V Holding current IH VAK=12.0Vdc RGK=1KΩ Tc =25℃ 0.19 3.0 mA Tc =-40℃ 0.33 6.0 Tc=110℃ 0.07 2.0 Latching current IL VAK=12.0Vdc IG=20mA Tc =25℃ 0.20 5.0 mA Tc =-40℃ 0.35 7.0 Critical rate of rise of off-state voltage dv/dt VAK=Rated VDRM, RGK=1KΩ TC=110℃ 8.0 V/us
1 CATHODE
2 ANODE
3 GATE
D-PAK (TO-252) DIM MILLIMETERS A B C D F H I J L 6 50 ± 0 2 5 60 ± 0 2 5 20 ± 0 2 1 50 ± 0 2 2 70 ± 0 2 2 30 ± 0 1 1 00 MAX 2 30 ± 0 2 0 5 ± 0 1 0 50 ± 0 10 E 1 6 ± 0 2O A C DBE I J Q H F F O L 1 2 3 0 95 MAXQ
- 02. 06 2/2Revision No : 0 Typical Characteristics C106DB/DD/DM