2SC1061 ISC | Alldatasheet
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061
DESCRIPTION
- With TO-220 package
- Low saturation voltage
- Complement to type 2SA671
- Note: type 2SC1060 with short pin
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 4 V IC Collector current (DC) 3 A ICM Collector current-peak 8 A IB Base current (DC) 0.5 A PC Collector power dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal resistance from junction to case 5.0 ℃/W
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA ;IB=0 50 V V(BR)CBO Collector-base breakdown voltage I C=5mA ;IE=0 50 V V(BR)EBO Emitter-base breakdown voltage I E=5mA ;IC=0 4 V VCEsat Collector-emitter saturation voltage I C=2A; IB=0.2A 1.0 V VBE Base-emitter on voltage I C=1A ; VCE=4V 1.5 V ICBO Collector cut-off current V CB=25V;IE=0 0.1 mA IEBO Emitter cut-off current V EB=4V; IC=0 0.1 mA hFE-1 DC current gain I C=0.1A ; VCE=4V 35 hFE-2 DC current gain I C=1A ; VCE=4V 35 320 fT Transition frequency I C=0.5A ; VCE=4V 5.0 MHz hFE-2 classifications A B C D 35-70 60-120 100-200 160-320
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061