C106 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc Thyristors C 1 0 6
FEATURES
- Glassivated surface for reliability and uniformity
- Practical level triggering and holding characteristics
- Designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning system s where reliability of operation Is important. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak off-state voltage 400 V IT(AV) Average on-state current 2.5 A IT(RMS) RMS on-state current 4 A PGM Peak gate power 0.5 W PG(AV) Average gate power 0.2 W ITSM Non-repetitive peak on-state current 20 A Tj Operating junction temperature 125 ℃ Tstg Storage temperature -40~+ 150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRRM=400V VRRM=400V, Tj= 125℃ 10 200 μA IDRM Repetitive peak off-state current VDRM=400V VDRM=400V, Tj= 125℃ 10 200 μA IGT Gate trigger current VD= 6V; RL=100Ω, RGK=1KΩ 10 200 μA VTM On-state voltage I T= 8A 1.75 V IH Holding current VD=24V , RGK=1KΩ, ITM=4A 5 mA VGT Gate trigger voltage VD= 12V; RL=100Ω, RGK=1KΩ 0.8 V