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Technical content
1.3W EPITAXIAL ZENER DIODE
FEATURES
Φ 2.5 ± 0.2 Φ 0.8± 0.1 All Dimensions in mm DO-41(GLASS) ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25℃) Symbols Value Units Zener current see table "Characteristics" Power dissipation at TA=50℃ Ptot W Junction temperature TJ Storage temperature range TSTG 1)Valid provided that a distance of 8mm from case are kept at ambient temperature ELECTRCAL CHARACTERISTICS(TA=25℃) Symbols Min Typ Max Units Thermal resistance junction to ambient RthA 170 1) ℃/W Forward voltage at IF=200mA VF 1.2 V 1) Valid provided that a distance at 8mm from case are kept at ambient temperature 1.3 1) 175 -65 to +200
- Low profile package
- Built-in strain relief
- Low inductanc e
- High temperature soldering : 260°C /10 seconds at terminals
- Glass package has Underwriters Laboratory Flammability Classification
- In compliance with EU RoHS 2002/95/EC directives
- Case: Molded Glass DO-41G
- Terminals: Axial leads, solderable per MIL-STD-750, Method 2026 guaranteed
- Polarity: Color band denotes positive end
- Mounting position:Any
- Weight: 0.012 ounce, 0.336 gram
1.3W EPITAXIAL ZENER DIODE Type VZnom IZT for VZT and r zjT rzjK @ IZK IR @ VR TKVZ BZX85C V mA V1) Ω Ω mA μA V %/K 30 30 8 28~32 <30 <1000 0.25 <0.5 22 0.04~0.12 33 33 8 31~35 <35 <1000 0.25 <0.5 24 0.04~0.12 36 36 8 34~38 <40 <1000 0.25 <0.5 27 0.04~0.12 39 39 6 37~41 <50 <1000 0.25 <0.5 30 0.04~0.12 43 43 6 40~46 <50 <1000 0.25 <0.5 33 0.04~0.12 47 47 4 44~50 <90 <1500 0.25 <0.5 36 0.04~0.12 51 51 4 48~54 <115 <1500 0.25 <0.5 39 0.04~0.12 56 56 4 52~60 <120 <2000 0.25 <0.5 43 0.04~0.12
RATINGS AND CHARACTERISTIC CURVES BZX85C3V3 THRU BZX85C56 Characteristic s ( T j =2 5 ℃ unle ss o t he r wi s e s pe c i f ied) T – t o t P t o e w o P l a i D r i s s p t a n o i ( W ) R A J h t – i s e R . m r e h T n u J . t s c / n o i t ) W / K ( t n e i b m A l – Lead Le ng th (mm ) T a mb – Ambi ent T e mpe r at ure ( ℃ ) Figure2. The rmal Resist a n ce v s . Lead Length Figure1.T o t a l Po w e r Diss ip ation v s . Ambient T e mper atur e C D a C e d o i D – p c a t i n a e c ( p F ) r z f i D – n e r e f a i t s i s e R - Z l t n a e c ( Ω ) Vz- Z - V ol t a ge (V ) Vz- Z - V ol t a ge (V) Figure4.Di ffe rential Z-Re s i st ance v s .Z-V olt a ge Figure3. Dio d e Cap a cit a nce v s . Z-V o lt age – p h t Z e h T r m a e R l t s i s n a e c r o f o C e s l u P . d n ) W / K ( t p –Pulse Len gth (ms) Figure5. The rmal Respo n se V R =0V V R =2V V R =5V V R =20V V R =30V