BZX1.5C DGNJDZ | Alldatasheet
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BZX1.5C Silicon Planar Power Zener Diodes Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Power Dissipation P tot 1.5 1) W Junction Temperature T j 175 OC Storage Temperature Range T stg - 65 to + 175 OC 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 200 mA VF 1.2 V Max. 4.2 Max. 2.8 Glass Case DO-41 Max. 0.7 Min. 25.4 Min. 25.4 XXX Cathode Band Part No. Dimensions in mm Black Black
BZX1.5C Characteristics at Ta = 25 OC Zener Voltage 1) Dynamic Resistance Reverse Current VZnom V ZT at IZT ZZT Z ZT at I ZT IR at VR Maximum DC Zener Current 2) Type (V) (V) (mA) Max. ( Ω)M a x . ( Ω) (mA) Max. (µA) (V) IZM (mA) BZX1.5C4V3 4.3 4…4.6 87.2 6 500 1 5 1 348 BZX1.5C5V6 5.6 5.2…6 66.9 2 250 1 5 3 267 BZX1.5C30 30 28…32 12.5 26 750 0.25 1 22.8 50 BZX1.5C33 33 31…35 11.4 33 800 0.25 1 25.1 45 BZX1.5C36 36 34…38 10.4 38 850 0.25 1 27.4 41 BZX1.5C39 39 37…41 9.6 45 900 0.25 1 29.7 38 BZX1.5C43 43 40…46 8.7 53 950 0.25 1 32.7 34 BZX1.5C47 47 44…50 8 67 1000 0.25 1 35.8 31 BZX1.5C51 51 48…54 7.3 70 1100 0.25 1 38.8 29 BZX1.5C56 56 52…60 6.7 86 1300 0.25 1 42.6 26 BZX1.5C62 62 58…66 6 100 1500 0.25 1 44.1 24 BZX1.5C68 68 64…72 5.5 120 1700 0.25 1 51.7 22 BZX1.5C75 75 70…79 5 140 2000 0.25 1 56 20 Tested with pulse tp = 20 ms. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.