BZV85-C2V7

BZV85-C2V7 JINGHENG | Alldatasheet

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Technical content

R S E M I C O N D U C T O R BZV85/C 2V7 THRU BZV85/C 200 1W SILICON PLANAR ZENER DIODES

FEATURES

ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C) ELECTRICAL CHARACTERISTICS (TA=25 C) Case: DO-41 glass case Weight: Approx. 0.35 gram For use in stabilizing and clipping circuits with high power rating. The Zener voltage is graded according to the international E24 standard. Other voltage tolerance and higher Zener voltages are on request. Zener current see table "Characteristics" Thermal resistance junction to ambient Ptot R JA VF W TSTG Power dissipation at TA=25 C Junction temperature Storage temperature range 1) Valid provided that a distance of 8mm from case is kept at ambient temperature 1) Valid provided that a distance of 8mm from case is kept at ambient temperature Symbols Symbols Value Typ MaxMin Units Units -65 to+200 C C K/W V TJ 200 170 1.2 Forward voltage at IF=200mA JFJF High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DO-41(GLASS) Dimensions in inches and (millimeters) 1.00(25.4) MIN. 0.034(0.86) MAX DIA. 0.107(2.7) 0.080(2.0) DIA. 0.205(5.20) 0.161(4.10) 1.00(25.4) MIN. JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM10-16

BZV85... SILICON PLANAR ZENER DIODES IR at VR Dynamic resistance Reverse leakage currentZener Voltage range 1) 2)Type VZNOM IZT for VZT Temp Coefficient of zener voltage V V VmA AmA %/K TKVZ rZjt and rZjK at IZK BZV 85/C 2V7 BZV 85/C 3V0 BZV 85/C 3V3 BZV 85/C 3V6 BZV 85/C 3V9 BZV 85/C 4V3 BZV 85/C 4V7 BZV 85/C 5V1 BZV 85/C 5V6 BZV 85/C 6V2 BZV 85/C 6V8 BZV 85/C 7V5 BZV 85/C 8V2 BZV 85/C 9V1 BZV 85/C 10 BZV 85/C 11 BZV 85/C 12 BZV 85/C 13 BZV 85/C 15 BZV 85/C 16 BZV 85/C 18 BZV 85/C 20 BZV 85/C 22 BZV 85/C 24 BZV 85/C 27 BZV 85/C 30 BZV 85/C 33 BZV 85/C 36 BZV 85/C 39 BZV 85/C 43 BZV 85/C 47 BZV 85/C 51 BZV 85/C 56 BZV 85/C 62 BZV 85/C 68 BZV 85/C 75 BZV 85/C 82 BZV 85/C 91 2.7 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 2.7 2.7 4...4.6 4.4...5 5.2...6 7...7.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79 77...87 85...96 <20 <20 <20 <15 <15 <13 <13 <10 <3.5 <10 <15 <15 <20 <24 <25 <25 <30 <30 <35 <40 <50 <50 <90 <115 <120 <125 <130 <135 <200 <250 <400 <400 <400 <500 <500 <500 <600 <500 <400 <300 <300 <200 <200 <200 <200 <300 <350 <400 <500 <500 <500 <600 <600 <600 <750 <1000 <1000 <1000 <1000 <1000 <1500 <1500 <2000 <2000 <2000 <2000 <3000 <3000 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 <150 <100 <40 <20 <10 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 1.5 4.5 6.2 6.8 8.2 9.1 0...+0.045 JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM10-17

BZV85... SILICON PLANAR ZENER DIODES IR at VR Dynamic resistance Reverse leakage currentZener Voltage range 1) 2)Type VZNOM IZT for VZT Temp Coefficient of zener voltage V V VmA AmA %/K TKVZ rZjt and rZjK at IZK Note 1) Tested with pulse tp=20ms 2) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case 0 100 200 C 0.2 0.4 0.6 0.8 W 1.0 BZV85... Ptot Tamb Admissible power dissipation versus ambient temperature (Valid provided that leads at a distance of 10mm from case are kept at ambient temperature) BZV 85/C 100 BZV 85/C 110 BZV 85/C 120 BZV 85/C 130 BZV 85/C 150 BZV 85/C 160 BZV 85/C 180 BZV 85/C 200 94...106 104...116 114...127 124...141 138...156 153...171 168...191 188...212 <350 <450 <550 <700 <1000 <1100 <1200 <1500 <3000 <4000 <4500 <5000 <6000 <6500 <7000 <8000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 100 110 120 130 150 100 110 120 130 150 160 180 200 2.7 2.7 1.5 1.5 1.5 JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM10-18