BZV85-C11

BZV85 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1996 Apr 26

1999 May 11

book, halfpage M3D130

1999 May 11 2

Philips Semiconductors Product specification Voltage regulator diodes BZV85 series

FEATURES

• Total power dissipation: max. 1.3 W
• Tolerance series: approx.±5%
• Working voltage range: nom. 3.6 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation: max. 60 W.

APPLICATIONS

• Stabilization purposes.

DESCRIPTION

Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx.±5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).Fig.1 Simplified outline (SOD66; DO-41) and symbol. The diodes are type branded. handbook, halfpage MAM241 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. 2. If the leads are kept at Ttp=5 5°C at 4 mm from body.

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 500 mA IZSM non-repetitive peak reverse current tp = 100µs; square wave; Tj=2 5°C prior to surge; see Fig.3 see Table “Per type” tp = 10 ms; half sinewave; Tj=2 5°C prior to surge see Table “Per type” Ptot total power dissipation T amb =2 5°C; lead length 10 mm; note 1 − 1W note 2 − 1.3 W PZSM non-repetitive peak reverse power dissipation tp = 100µs; square wave; Tj=2 5°C prior to surge − 60 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage I F = 50 mA; see Fig.4 1 V

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Philips Semiconductors Product specification Voltage regulator diodes BZV85 seriesPer type Tj=2 5°C unless otherwise specified. BZV85- CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif(Ω ) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 5 and 6 TEST CURRENT IZtest (mA) DIODE CAP. C d (pF) at f = 1 MHz; VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM IR (µA) VR (V) at tp = 100µs; Tamb =2 5°C at tp = 10 ms; Tamb =2 5°C

1999 May 11 4

Philips Semiconductors Product specification Voltage regulator diodes BZV85 series BZV85- CXXX WORKING VOLTAGE V Z (V) at IZtest DIFFERENTIAL RESISTANCE rdif(Ω ) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 5 and 6 TEST CURRENT IZtest (mA) DIODE CAP. C d (pF) at f = 1 MHz; VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM IR (µA) VR (V) at tp = 100µs; Tamb =2 5°C at tp = 10 ms; Tamb =2 5°C

1999 May 11 5

Philips Semiconductors Product specification Voltage regulator diodes BZV85 series THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. GRAPHICAL DATA SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W R th j-a thermal resistance from junction to ambient lead length10 mm; note 1 175 K/W Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm. handbook, full pagewidth 10−2 10−1 11 0 1 0 2 103 104 MBG929 102 103 tp (ms) tp tp T Tδ = δ = 1 0.02 0.01 0.75 0.50 0.33 0.20 0.10 0.05 R th j-tp (K/W)

1999 May 11 6

Philips Semiconductors Product specification Voltage regulator diodes BZV85 series Fig.3 Non-repetitive peak reverse current as a function of the nominal working voltage. handbook, halfpage MBG802 102

10 V Znom (V)

(A) 11 0 2 10−1 (1) (2) (1) tp =1 0µs; half sinewave; Tamb =2 5°C. (2) tp = 10 ms; half sinewave; Tamb =2 5°C. Fig.4 Forward current as a function of forward voltage; typical values. handbook, halfpage 0 1.0 300 100 200 MBG925

0.5 VF (V)

(mA) (1) (2) (1) Tj= 200°C. (2) Tj=2 5°C. Fig.5 Temperature coefficient as a function of working current; typical values. BZV85-C3V6 to C10. Tj=2 5t o1 5 0°C. For types above 7.5 V the temperature coefficient is independent of current; see Table “Per type”. handbook, halfpage 05 0 MBG926

25 IZ (mA)

(mV/K) 4V7 4V3 3V6 3V9 9V1 8V2 7V5 6V8 6V2 5V6 5V1 Fig.6 Temperature coefficient as a function of nominal working voltage. handbook, halfpage100 102 MBG800 (mV/K) (2) (1) (3) IZ= IZtest; Tj=2 5t o1 5 0°C. (1) Maximum values. (2) Typical values. (3) Minimum values.

1999 May 11 7

Philips Semiconductors Product specification Voltage regulator diodes BZV85 series PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ Note 1. The marking band indicates the cathode. SOD66 DO-41 97-06-20 Hermetically sealed glass package; axial leaded; 2 leads SOD66 UNIT b max. mm 0.81 D max. G 1 max. 284.82.6 L min. DIMENSIONS (mm are the original dimensions) G 1LD L b (1) 0 2 4 mm scale k a

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 1999 64 Philips Semiconductors – a worldwide company Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

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