BZV80 PHILIPS | Alldatasheet
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Technical content
Product specification Supersedes data of April 1992
1996 Mar 21
BZV80; BZV81 Voltage reference diodes 1/3 page (Datasheet) M3D054
1996 Mar 21 2
Philips Semiconductors Product specification Voltage reference diodes BZV80; BZV81
FEATURES
- Reference voltage range: 5.89 to 6.51 V (nom. 6.20 V)
- Low temperature coefficient range: max. 0.005 to 0.01 %/K. APPLICATION
- Voltage reference sources.
DESCRIPTION
Leadless voltage reference diode in a small glass SOD80 SMD package. Fig.1 Simplified outline (SOD80) and symbol. handbook, 4 columns MAM215 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IZ working current − 50 mA Ptot total power dissipation T amb =5 0°C; note 1 − 400 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −20 +80 °C
1996 Mar 21 3
Philips Semiconductors Product specification Voltage reference diodes BZV80; BZV81
ELECTRICAL CHARACTERISTICS
Tj= 2 5°C unless otherwise specified. Notes 1. The quoted values ofΔVref are based on a constant current IZ. Two factors can causeΔVref to change with IZ, namely the differential resistance rdif and the temperature coefficient SZ. a) Each change of IZ can result in a maximum change ofΔVref as follows:ΔVref(mV) =ΔIZ (mA) × 15 Ω taking into account that rdif is max. 15Ω . b) The temperature coefficient of the reference voltage SZ is also a function of IZ. However, for these reference diodes SZ varies max.±0.05 mV/K or±0.001%/K when IZ is between 6 and 10 mA, so this effect can be neglected in practice for these types. 2. The temperature coefficient of the reference voltage is obtained from the following formula: THERMAL CHARACTERISTICS Note 1. Device mounted on a FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. NOM. MAX. UNIT Vref reference voltage I Z = 7.5 mA 5.89 6.20 6.51 V ΔVref reference voltage excursion IZ = 7.5 mA; test points for notes 1 and 2 BZV80 −− 62 mV BZV81 −− 31 mV SZ temperature coefficient I Z = 7.5 mA: notes 1 and 2 BZV80 −− 0.01 %/K BZV81 − 0.005 %/K rdif differential resistance I Z = 7.5 mA −− 15 Ω SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 300 K/W R th j-a thermal resistance from junction to ambient note 1 380 K/W S Z V ref1 V ref2– V ref nom
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Philips Semiconductors Product specification Voltage reference diodes BZV80; BZV81 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Fig.2 SOD80. handbook, full pagewidth MBA388 - 2 1.7 1.5 3.7 3.3 0.3 0.3 O Dimensions in mm. The cathode is indicated by a yellow band.