BZV49 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1999 May 11

2005 Feb 03

book, halfpage M3D109

2005 Feb 03 2

Philips Semiconductors Product specification Voltage regulator diodes BZV49 series

FEATURES

  • Total power dissipation: max. 1 W
  • Tolerance series: approx.±5%
  • Working voltage range: nom. 2.4 to 75 V (E24 range)
  • Non-repetitive peak reverse power dissipation: max. 40 W.

APPLICATIONS

  • General regulation functions.

DESCRIPTION

Medium-power voltage regulator diodes in a SOT89 plastic SMD package. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). PINNING PIN DESCRIPTION 1 anode 2 cathode 3 anode 321 sym096 Fig.1 Simplified outline (SOT89) and symbol.

ORDERING INFORMATION

  1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range). MARKING TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BZV49-C2V4 to BZV49-C75 note 1 SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y −− BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y −− BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y −−

2005 Feb 03 3

Philips Semiconductors Product specification Voltage regulator diodes BZV49 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.

ELECTRICAL CHARACTERISTICS

Tamb =2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100µs; square wave; Tj=2 5°C prior to surge see Table “Per type” Ptot total power dissipation T amb =2 5°C; note 1 − 1W PZSM non-repetitive peak reverse power dissipation tp = 100µs; square wave; Tj=2 5°C prior to surge; see Fig.2 − 40 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage I F = 50 mA; see Fig.3 1 V

2005 Feb 03 4

Philips Semiconductors Product specification Voltage regulator diodes BZV49 seriesPer type Tj=2 5°C unless otherwise specified. BZV49- CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif(Ω ) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. C d (pF) at f = 1 MHz; at VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100µs; Tamb =2 5°CIR (µA) VR

2005 Feb 03 5

Philips Semiconductors Product specification Voltage regulator diodes BZV49 series BZV49- CXXX WORKING VOLTAGE V Z (V) at IZtest DIFFERENTIAL RESISTANCE rdif(Ω ) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. C d (pF) at f = 1 MHz; at VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100µs; Tamb =2 5°CIR (µA) VR

2005 Feb 03 6

Philips Semiconductors Product specification Voltage regulator diodes BZV49 series THERMAL CHARACTERISTICS Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-tp) thermal resistance from junction to tie-point 15 K/W R th(j-a) thermal resistance from junction to ambient note 1 125 K/W GRAPHICAL DATA Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. handbook, halfpage MBG801 103 1 duration (ms) PZSM (W) 102 10−1 (1) (2) (1) Tj=2 5°C (prior to surge). (2) Tj= 150°C (prior to surge). Fig.3 Forward current as a function of forward voltage; typical values. handbook, halfpage 0.6 1 300 100 200 MBG781

0.8 VF (V)

(mA) Tj=2 5°C.

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Philips Semiconductors Product specification Voltage regulator diodes BZV49 series Fig.4 Temperature coefficient as a function of working current; typical values. handbook, full pagewidth MBG927 10-3 10-2 10-1 1IZ (A) SZ (mV/K) 4V3 3V9 3V6 3V3 3V0 2V7 2V4 BZV49-C2V4 to C4V3. Tj=2 5t o1 5 0°C. Fig.5 Temperature coefficient as a function of working current; typical values. handbook, halfpage 02 0 16 MBG924 48 1 2 IZ (mA) SZ (mV/K) 4V7 9V1 8V2 7V5 6V8 6V2 5V6 5V1 BZV49-C4V7 to C10. Tj=2 5t o1 5 0°C.

2005 Feb 03 8

Philips Semiconductors Product specification Voltage regulator diodes BZV49 series PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA DIMENSIONS (mm are the original dimensions) SOT89 TO-243 SC-62 99-09-13 04-08-03 w M e E H E B 0 2 4 mm scale bp3 bp2 bp1 c D Lp A Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 12 3 UNIT A mm 1.6 1.4 0.48 0.35 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 H E Lp 4.25 3.75 e 3.0 w 0.13 1.5 1.2 0.8 bp2bp1 0.53 0.40 bp3 1.8 1.4

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Philips Semiconductors Product specification Voltage regulator diodes BZV49 series DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2005 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R76/04/pp10 Date of release:2005 Feb 03 Document order number: 9397 750 13926