BZV48C3V3 STMICROELECTRONICS | Alldatasheet

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S G S-THOMSON S1C D I 292923? OOOe4Se 4 I ; Pn - 590 02452. DTHNHIG | > f-\\ THOMSON-CSF BZV 48 C3V3 — BZV 48 C200 DIVISION SEMICONDUCTEURS : 7 ZENER DIODES. DIODES ZENER Prot =5W : 5 W hermetically sealed plastic silicon Zener 33V < Vzt nom < 200V diodes offering the following advantages : . . ‘© Large voltage range : 3,3 V to 200V ‘@ Pro Electron registration . @ High surge capability :200 W@10 ms | Diodes Zener au silicium encapsulées plastique de 5 W offrant les avantages suivants : ei 1DO-27A (CB-197) ‘© Gamme de tension étendue : 3,3 V4200V ‘@ Enregistrement Pro Electron ‘© Forte tenue en surcharge :200 W@ 10 ms . ABSOLUTE RATINGS (LIMITING VALUES) t, 25°C d= 10mm {Unless otherwise stated) VALEURS LIMITES ABSOLUES D'UTILISATION amb = (Sauf indications contraires) i DC power dissipation (sae fig. 1) 2 | | Bsbtinsepasins tie mera.» Tawcsre | tx | 5 | w | : Continuous reverse current = 50" See page 2 [Sceocatmae™ tomers | iw | terme | m : Non repetitive st ik power dissipation {t = 10 ms) (see fig. 5) Operating temperature” vie fe fee | ‘Storage temperature a [ieee | toe | oem | | ‘Maximum junction temperature max °c Température maximale de jonction Maximum ead temperature for soldering during 3s at 6 mm from case 1 °c Température maximum de soudure des connexions pendant 3 s 4 6 mm du boitier t Junction-ambient thermal resistance ow Aésistence thermique jonction-embiante mx December 1982-173 ' 50, rue Jean-Pierre Timbaud-B.P.5. THOMSON F - £2403 Courbevoie Cadex FRANCE | TéL:(1) 788-5001 Telex 610900 96 A) COMPOSANTS es

S G S-THOMSON sac D I 292123? Gooe4s3 T | BZV 48 C3V3 -- BZV48C200 . - . ec . 59C 02453. 0 TH//-1& ae .- ELECTRICAL CHARACTERISTICS Tamb = 26°C. °°» Lo oe fat lme yh CARACTERISTIQUES ELECTRIQUES . . - 7 ratlizr «vz wR : ‘max 1 max ao (104/°C) wad BZv 48. 03V3 313s | 3_ [30 | - 60 1430 BZV 45. C3V6 3a 38] 28 | 30 | - 55 1310 BZ 48. 3V9 370 a1 | 2° | 320 | = 80 1220 ZV 48 C4V3 30 4 | 2 | 20 | = 40 1020 BZV 45 C4V7 4480 | 2. | 260 | - 20 +1000 BZv 48. CBV1 4s 84 | ts | 200 10 925 BZV 48 C BYE 52 60 | 1 | 220 25 | 20 1 | 830 : Bzv 48 C6v2 se 66 | 1 | 200 32 | 10 1 | 70 av 48 C6ve 6472] 1. | 175 “> | 10 2 | 690 Bzv 48 C7V5 yo 678 | 1s | 18 4s | 10 2 | 0% 8zv 48 Cav? 77 a7 | x8 | 180 4s | 10 3 | 570 82v 48 C9Vt as 96 | 2 | 160 on 10 bs | so 82 48.6 10 oa ws] 2 | 125 85 | 10 76 | 470 ezvaec 11 wos 1p | 28 | 128 60 8 83 | 430 BZV 48612 ua a? | 25 | 100 05 2 .| 31 | 390 : 82v 48 C13 we owt | 2 | 100 os 1 39 | 350 Bzv48 C15 138 16,6 25 7 70 1 W4 320 B2va8 C16 ws ow | 28 | 70 os | 122 | 20 8zv 48 C18 cy rs rs 75 os | 137 | 260 i 82v 48 620 we 22] 3 6 is os | 152 | 235 i - BzV 48 C22 208 23,3 35 ca 80 05 16,7 215 B2v 48.6 24 ws we} 38 | # 80 os | 162 | iss Bzv 48 C27 21 me] 6 50 85 os | 208 | 170 8Zv 48630 2 32 8 20 88 og | 228 | 185 BZV 48 C33 n 35 10 40 85 05 25 140 H b2v 48.636 u 8 " 30 as os | 274 | 130 BZV 48C39 7 4 4 wo 30 05 296 120 Bzv 48 C43 w 4% | 2 30 90 os | 327 | 10 Bzv 48 C47 44 50 25 we 80 Ob 7 100 82v 48 C51 aw os | 27 F 80 os | 38a | 82 BZV 48 C56 52 60 36 2 90 05 42,5 3s 82v 48 662 s 66 | az 2 80 os | am | . Bzv 48 C68 a om | 4 20 20 os | siz | 6 82v 48.676 mn ® | a 20 20 os | 67 | 63 BZV 48 C82 7 a7 65 15 90 05 62.4 87 ! Bzv48.C91 % 9% | 7 8 20 os | ez | 62 BZV 48 C100 4 106 90 12 80 O85 6 47 savaecio | 104 16 | 128 2 os os | as | 4 | BZV 48 C 120 M4 127 170 10 85 05 912 38 ezvaeciso | 124 141 | 190 10 85 os | se | 35 i szvasciso | 138 ts. | 330 8 95 os Jue | 2 | ezvascio | 1371 | 350 8 95 os ji | 2 i BZV 48 C 180 168 131 430 6 95 05 137 26 i szvaac20 | 18 212] 480 5 0 os | we | 2 i * Pulse test < <2 : Mesure en impuson ‘P <S0™S 9< 2% ‘The regulation voltages are defined according to the E 24 series: i Les tensions de régulation sont définies selon la série E 24 Forward voltage drop Vy = = 25° : Chute de tension to F <1,2V @ IF =1A, Temb = 25°C i 7 i (CASE DESCRIPTION . DESCRIPTION DU BOITIER @ 5.1 max, @ 1,28 max. Weight . . Wage 10 1 fy" Marking cea, ing at cathode end 26min, 9,8 max. 26 min, . Marquage en clair, anneau coté cathode A 0-27 A(CB-197) | : 38 i 96 ; . gr | © ee

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2 BZV48C3V3 — BZ2v480200

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i o 50 100 150175 5 10 16 20 25 Fig. 1 — Maximum allowable power dissipation versus Fig. 2 — Thermal resistance junction-ambient versus tmbionttemporeture teas length typoa velvet Vz (mv/ec) Mounting? 1: Mounting n® 2: a INFINITE HEATSINK PRINTED CIRCUIT ee / SESS SS sas 5 | EERE SSSESS 4 i} es A SN SO De | a == SS SS eee waldea i EF} + 4 lew Ad | a 0 eC! ! == a SSSSSSs== ee oo oe Sees c=== 2 4 6 8 10 12 a i a : Hy a LAT eee EAC : === HA . — rrr vo ek wt === FSS SaaS : =———— = = 9 er] EREEEEFEEH . ry 50 100 150 200 Fa 4 - Peak forward 20 Ree cuent ley versus versus V27 (typical values) AT} cal Values) 08 1,0 15 roe PRSMOM) pee a . Ee He See eee eee emer PH oe | a | | oe rg i == Sa ae SSS eo eaall ears eases = Seseeert eect amet ements Fe Soret eset oc eet a | | eR A a oi 102! 10-2 101 1 10 10-2 10-1 1 10 102 Fig. 5 — Non repetitive surge peak reverse power Fig. 6 — Transient thermal impedance junction- dissipation PRSM versus pulse duration at Tj initial = connexions Zth, (ig) varous pulse duration t for (25°C (maximum values), ‘mounting n° 1 with d= 10 mm (typical values). t 3/3 | 97 ee