BZV47C5V1 STMICROELECTRONICS | Alldatasheet
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Technical content
VOLTAGERANGE : 5.1 V to 200 V HERMETICALLY SEALED PLASTIC CASE : F126 PACKAGE HIGH SURGE CAPABILITY : 55 W (10 ms) .
FEATURES
Symbol Parameter Value Unit P Power dissipation on infinite heatsink Tamb =5 5°C2 W Tstg Tj Storage temperature range Maximum junction temperature - 65 to + 175 175 TL Maximum lead temperaturefor soldering during 10s at 5mm from case 230 °C ABSOLUTE RATINGS (Tamb = 25°C)
DESCRIPTION
2 W silicon Zener diodes. January 1998 Ed : 2 BZV47C5V1 / 200 2W ZENER DIODES Symbol Parameter Value Unit R th(j-l) Junction to lead 60 °C/W R th(j-a) Junction to ambient on printed circuit on recommended pad layout 100 °C/W THERMAL RESISTANCES
TYPES V ZT @I ZT rZK /IZK IZT ∝ VZ IR /VR VR IZM I ZSM VV Ω mA 10 -4/°C µAV m A A BZV47C5V1 4.8 5.4 5 100 1 5 1 370 7.8 BZV47C5V6 5.2 6 2 100 2.5 5 1 330 7.1 BZV47C6V2 5.8 6.6 2 100 3.2 5 1 300 6.4 BZV47C7V5 7 7.9 2 100 4.5 5 2 250 5.4 BZV47C10 9.4 10.6 4 50 5.5 5 7.6 185 4 BZV47C15 13.8 15.6 10 50 7 1 11.4 130 2.7 BZV47C30 28 32 15 25 8.5 0.5 22.8 62 1.3 BZV47C36 34 38 40 10 8.5 0.5 27.4 52 1.1 BZV47C39 37 41 40 10 9 0.5 29.6 48 1 BZV47C47 44 50 45 10 9 0.5 35.7 40 0.85 BZV47C68 64 72 80 10 9 0.5 51.7 27 0.59 BZV47C100 94 106 200 5 9 0.5 76 18 0.4 BZV47C150 138 156 300 5 9.5 0.5 114 12.8 0.27 BZV47C200 188 212 350 5 9.5 0.5 152 9.4 0.20 Note 1 : Pulse test : tp≤ 50ms Note 2 : On infiniteheatsink : L = 10mm Note 3 : rectangular waveform (tp = 10ms) Forward voltage drop : VF ≤ 1.2 V (Tamb = 25°C, IF = 500mA) ELECTRICAL CHARACTERISTIC (Tamb= 25°C) Fig. 2 :Thermal resistance versus lead length.Fig. 1 : Power dissipation versus ambient temperature. BZV47C5V1 / BZV47C200
Fig. 4 : Junction capacitance versus reverse voltage applied (typical values). Fig. 3 :Relative variation of thermal impedance junction to ambient versus pulse duration (PC board FR4, L leads= 10mm). Fig. 5 :Peak forward current versus peak forward voltage drop (typical values). 1 10 100 200 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 I(µA) R Tj = 150°C VR = 0.75*VZT VZT (V) Fig. 6 :Leakage current versus regulation volt- age (typical values). Fig. 7 :Differential resistance versus regulation voltage (typical values). Fig. 8 :Peak pulse power versus pulse duration (rectangular waveform, maximum values). BZV47C5V1 / BZV47C200
F126 (Plastic) Packaging : standard packaging is in tape and reel. PACKAGE MECHANICAL DATA REF. DIMENSIONS Millimeters Inches B 26 31 1.024 1.220 L1 1.27 0.050 Note1 : Theleadis notcontrolled within zoneL1. Weight = 0.40 g. MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSONMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. ORDER CODE BZV47C 5V1 Type Nominal Voltage BZV47C5V1 / BZV47C200