BZV47C62 STMICROELECTRONICS | Alldatasheet

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G7 7} SGS-THOMSON Fills” MICROELECTRONICS BZV 47 C 3V3 —> 200 S G S-THOMSON ZENER DIODES = VOLTAGE RANGE : 3.3V TO 200V = HERMETICALLY SEALED PLASTIC CASE = PACKAGE ACCORDING TO NORMALIZATION CCTU:F 126 = PRO ELECTRON REGISTRATION a HIGH SURGE CAPABILITY (55W @ 10ms) F126 DESCRIPTION (Plastic) 2W silicon Zener diodes. ABSOLUTE RATINGS (limiting values) [Fas | Contnuous Reverso Curent [Taro = 55 | Seepage? | mA _| [Cesw [Peak Rover Current ——~SCS~*d Tay = 2 | Seepage? || in T. | Maximum Lead Temperature for Soldering during 300 c 3s at 5mm from case _ THERMAL RESISTANCE [Symbol Parameter [value TF uit_} [i yar | Junction-ambient” [eo | cw J * On infinite heatsink with 10mm lead length July 1989 14

ELECTRICAL CHARACTERISTICS (Tama = 25°C unless otherwise spectfied) Types. Varley Farlay | lar «Vz In’Va | VR tam | tzsu min = max max typ max Temp = i 55°C | ™ (a) (mA) (or*rc) (Ay v) (mA) (A) a) a) () . 2) (3) BZV 47 C 3V3 31 35 10 100 -60 570 wi) BZv 47 C 3V6 34 38 10 100 -55 525 an | Bzv 47 Cave 37044 7 | 100 -50 495 | 103 | BZV 47 ¢ 4v3 4046 | 7 | 100 -40 495 92 BZv 47 C 4v7 46 50 7 | 100 =20 400 as P B2v 476 5V1 480084 5 | 100 10 370 78 P BZV 47 C 5V6 $2 60 | 2 100 25 5 1 330 71 P Bz 47 C ave sa 66 | 2 | 100 32 5 1 300 64 P Bzv 47 C 6V8 64 72) 2 100 40 5 1 275 59 azv 47 ¢ TVS 70 «79 2 | 100 45 5 2 | 250 54 Bzv 47 ¢ v2 77 a7 | 2 | 100 48 5 35 | 20 | 43 BZV 47 C 9v1 85 96 4 50 St 5 35 205, 44 B2v 47 10 g4 106 4 50 55 5 76 | 185 40 ezv 4711 tos 116 7 | 50 60 1 aa | 170 36 Pazva7ci2 14427 7 | 50 65 1 a1 | 155 33 BZv 47 613 24 141 | 10 | 50 65 1 so | 140 30 Pazv 47615 se 6 ts6 | to | 50 70 : 114 | 130 27 BZV 47 C 16 53°0171 | 15 | 28 70 os v2 | ns 25 P BV 47.018 wa 191 | 1s | 25 75 05 137 | 105 22 P azv 47.6 20 wes 22 | is | 25 75 0s 132 | 94 | 20 P BZzv 47 C 22 208 23.3 15 25 80 os 167 86 18 P Bzv 47.0 24 28 286 | 18 | 25 80 05 1a2 | 78 17 P BZ 470.27 21 29 | 15 | 25 85 08 205 | 69 15 P Bz 47 6.30 2B 32 1s | 25 85 05 22a | 62 13 BZv 47 C 33 31 35 | 15, 25 as 05 25 87 12 P BZv 476 36 34 38 40 10 as 05 274 | 52 1" Bzv 47 C 39 37 at 40 10 90 | 05 296 48 1.0 BZv 47 C43 40046 48 10 90 | (08 327 | 43 | ose P BZV 47 C47 4450 45 10 so | 08 357 | 40 | 02s B2V 47 51 48 54 60 10 9.0 | 05 388 37 078 82C 47 C 56 5260 60 10 90 08 as | aa | o7t P azv 47 G62 5868 80 10 90 05 471 | 30 | 064 P B2v 476.68 6472 80 10 90 05 si7 | 27 | 059 azv 47.6 78 70 79 -| 100 10 90 05 37 25 | 053 BZv 47 C 82 7787: | 100 10 90 05 62s | 23 | 049 Bzv 47.6 9% 8 96 | 200 5 90 05 692 | 20 | 044 P Bzv 47 ¢ 100 94 108 | 200 5 90 05 76 | 18 | 040 BZV 47.0 110 toe tte | 280 5 95 05 ass | 17 | 036 Bzv 47 C120 1400127 250 5 85 05 gr2 | 15 033 P B2v 47 190 124 141} 300 5 95 05 92 | 14 | 020 P BZV 47 C 150 138 156 | 300 5 95 05 jit ve] 027 BZV 47 C 160 153, oral 350 5 95 | 05 122 17 025 aZv 47 ¢ 180 168 191—«'| 350 5 95 | 08 | 197 105 | 022 P BZV 47 C 200 188 212 350 5 95 Los 152 94 020 (1) Pulse test tps 50ms 8<2% (2) On infinite heatsink d= 10mm (3) Rectangular wavetorm (1, = 10ms) The regulation voltages are detined according to the E24 series P Prelerred voltages Forward voltage drop Ves 1 2V (Tams = 25 C, lr = 500mA) es iy S&S:THOMSON __ SY/ wenoe.ecrncees

PW Ren (c/w) COCCCN nD Pee CEE LEH ASE EAH jE Pit tT rN Try oo err sO N TT Eee TTT PTA NET oA OTT TTT Pty PrN TT COT PPT TSN aot TTT HH tw eo PN CO CULT [ tem 0) TTT oL LOLI TTT rt J oO 2 50 7S 100 125 150 475 5 10 45 20 25 Fig.4 — Power dissipation versus ambient Fig.2 - Thermal resistance versus temperature. lead length. Zth j-a (°C/W)

10 A Seer Mounting se 4 Mounting ne2

So i ee se os ss | INFINITE HEATSINK PRINTED CIACUIT FEAST EOC ea L o LE er TT hr G a tice eee Test point ep LTT *comexson ) BSS SS SSS aay eae SSrtee ieee ee Cee wot COUT IPT es J soe Fig.a ~ Transient thermal impedance ae junction-anbient for mounting ne2 Seeee Ree versus pulse duration (L = 40 ar). CCEEECC ERE so rr Lt art TTT Bees) =. LUTITTT ee o LYALL Fc a a a ee | 2 it a Ce Piece eesti FH bez soe SH PAT TTT Tey ey PSone et tH COO SESS Pe vo LLIN Lt von 4 40 100 500 1 15 2 25 3 35 4 Fig.4 - Capacitance versus reverse Fig.5 - Peak forward current applied voltage. versus peak forward voltage drop {typical values) . IRCRORICTROMCS

102 (oe STI ee Sea ry ~ SSS FER ETE oy =o vy Fe tar 5

10 St iad nt TT

ee eri, LEI TNUT y EE ai: Set eee aga See eel ee sii ee FS eetizr = 2 mt ee | | FFA A nti SS LL el a A eae a a es to? COCCI Se esses cette eaait ease ieee asi Ee EA er | Ever 0 ws Coco erm er} LETTE ver @ 4 40 402 103 4 10 102 103 Fig.8 ~ Reverse current versus regulation Fig.7 - Differential resistence versus voltage (typical values) . regulation voltage (typical values) . ee ee ESSE ty smitie: = 25 «c] Sestiiesesn Sestti emesti SSE FH Cee ce HES A ve LAUT TT ee etiiieeeetitl eematins emer 0H Bis Coin Aon OS 8 oP sot 1 10 woe Fig.8 - Peak pulse power versus pulse duration (rectangular wave form) (maximum values) . PACKAGE MECHANICAL DATA F 126 (Plastic) ann eaeme bmn z 2.3080 | | f Hers a oon earl i oa os Cooling method by convection (method A) Marking clear ring at cathode end Weight" 0.49 a@ ee scs-tHomson SY inicromscteenics