BZV37 PHILIPS
Document overview
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Technical content
Product specification Supersedes data of April 1992
1996 Apr 26
Bidirectional voltage regulator diode book, halfpage M3D169
1996 Apr 26 2
Philips Semiconductors Product specification Bidirectional voltage regulator diode BZV37
FEATURES
- Low total power dissipation: max. 400 mW
- Working voltage: nom. 6.5 V
- Non-repetitive peak reverse power dissipation: max. 40 W
- Bidirectional.
APPLICATIONS
- Voltage stabilizer and transient protection element.
DESCRIPTION
Low-power voltage regulator diode in an hermetically sealed leaded glass SOD68 (DO-34) package. Fig.1 Simplified outline (SOD68; DO-34) and symbol. The diode is type branded. handbook, halfpage MAM247 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj=2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IZ continuous working current − 50 mA IZSM non-repetitive peak reverse current t = 30 s; t1 =8 µs; t2 =2 0µs; Tj=2 5°C prior to surge; see Fig.3 − 7A t = 30 s; t1 =1 0µs; t2 = 1000µs; Tj=2 5°C prior to surge; see Fig.3 − 2A Ptot total power dissipation T amb ≤ 25 °C − 400 mW PZSM non-repetitive peak reverse power dissipation tp = 100µs square wave; Tj=2 5°C prior to surge; see Fig.2 − 40 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS MIN. NOM. MAX. UNIT VZ working voltage I Ztest= 5 mA 6.2 6.5 6.8 V V(CL)R clamping voltage I ZSM = 7 A; t1 =8 µs; t2 =2 0µs −− 25 V IZSM = 2 A; t1 =1 0µs; t2 = 1000µs −− 15 V rdiff differential resistance IZtest=5m A −− 20 Ω SZ temperature coefficient IZtest=5m A −− 0.1 %/K C d diode capacitance V R =0V −− 150 pF IR reverse current V R =4V −− 10 µA VR =4V ; Tj= 150°C −− 30 µA VR =2V −− 3 µA
1996 Apr 26 3
Philips Semiconductors Product specification Bidirectional voltage regulator diode BZV37 THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length 8 mm 300 K/W R th j-a thermal resistance from junction to ambient lead length max.; note 1 380 K/W GRAPHICAL DATA Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. handbook, halfpage MBG801 103 1 duration (ms) PZSM (W) 102 10−1 (1) (2) (1) Tj=2 5°C (prior to surge). (2) Tj= 150°C (prior to surge). Fig.3 Current pulse according to IEC 60-2, Section 6. handbook, halfpage MLC733 t I 100 ZSM (%)
1996 Apr 26 4
Philips Semiconductors Product specification Bidirectional voltage regulator diode BZV37 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Dimensions in mm. Fig.4 SOD68 (DO-34). handbook, full pagewidth 1.6 max 25.4 min 25.4 min3.04 max 0.55 max MSA478