BZT03 PHILIPS

Document overview

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Technical content

Product specification Supersedes data of April 1992

1996 Jun 11

handbook, 2 columns M3D116

1996 Jun 11 2

Philips Semiconductors Product specification Voltage regulator diodes BZT03 series

FEATURES

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Zener working voltage range: 7.5 to 270 V for 38 types
  • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types
  • Available in ammo-pack.

DESCRIPTION

Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM204 ka /#03/#03/#03 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ptot total power dissipation T tp=2 5°C; lead length 10 mm; see Fig.2− 3.25 W Tamb =4 5°C; see Fig.2; PCB mounted (see Fig.6) − 1.30 W PZRM repetitive peak reverse power dissipation − 10 W PZSM non-repetitive peak reverse power dissipation tp = 100µs; square pulse; Tj=2 5°C prior to surge; see Fig.3 − 600 W PRSM non-repetitive peak reverse power dissipation 10/1000µs exponential pulse (see Fig.4); Tj=2 5°C prior to surge − 300 W Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C

1996 Jun 11 3

Philips Semiconductors Product specification Voltage regulator diodes BZT03 series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. Per type when used as voltage regulator diodes Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage I F = 0.5 A; see Fig.5 1.2 V TYPE No. SUFFIX (1) WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMPERATURE COEFFICIENT TEST CURRENT REVERSE CURRENT at REVERSE VOLTAGE VZ (V) at IZ rdif(Ω )a tIZ SZ (%/K) at IZ IZ (mA) IR (µA) VR (V) C13 12.4 13 14.1 5 10 0.05 0.10 50 2 10 C15 13.8 15 15.6 5 10 0.05 0.10 50 1 11 C16 15.3 16 17.1 6 15 0.06 0.11 25 1 12 C18 16.8 18 19.1 6 15 0.06 0.11 25 1 13 C20 18.8 20 21.2 6 15 0.06 0.11 25 1 15 C22 20.8 22 23.3 6 15 0.06 0.11 25 1 16 C24 22.8 24 25.6 7 15 0.06 0.11 25 1 18 C27 25.1 27 28.9 7 15 0.06 0.11 25 1 20 C30 28 30 32 8 15 0.06 0.11 25 1 22 C33 31 33 35 8 15 0.06 0.11 25 1 24 C36 34 36 38 21 40 0.06 0.11 10 1 27 C39 37 39 41 21 40 0.06 0.11 10 1 30 C43 40 43 46 24 45 0.07 0.12 10 1 33 C47 44 47 50 24 45 0.07 0.12 10 1 36 C51 48 51 54 25 60 0.07 0.12 10 1 39 C56 52 56 60 25 60 0.07 0.12 10 1 43 C62 58 62 66 25 80 0.08 0.13 10 1 47 C68 64 68 72 25 80 0.08 0.13 10 1 51 C75 70 75 79 30 100 0.08 0.13 10 1 56 C82 77 82 87 30 100 0.08 0.13 10 1 62 C91 85 91 96 60 200 0.09 0.13 5 1 68

1996 Jun 11 4

Philips Semiconductors Product specification Voltage regulator diodes BZT03 series Note 1. To complete the type number the suffix is added to the basic type number, e.g. BZT03-C100. C100 94 100 106 60 200 0.09 0.13 5 1 75 C110 104 110 116 80 250 0.09 0.13 5 1 82 C120 114 120 127 80 250 0.09 0.13 5 1 91 C130 124 130 141 110 300 0.09 0.13 5 1 100 C150 138 150 156 130 300 0.09 0.13 5 1 110 C160 153 160 171 150 350 0.09 0.13 5 1 120 C180 168 180 191 180 400 0.09 0.13 5 1 130 C200 188 200 212 200 500 0.09 0.13 5 1 150 C220 208 220 233 350 750 0.09 0.13 2 1 160 C240 228 240 256 400 850 0.09 0.13 2 1 180 C270 251 270 289 450 1000 0.09 0.13 2 1 200 TYPE No. SUFFIX (1) WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMPERATURE COEFFICIENT TEST CURRENT REVERSE CURRENT at REVERSE VOLTAGE VZ (V) at IZ rdif(Ω )a tIZ SZ (%/K) at IZ IZ (mA) IR (µA) VR (V)

1996 Jun 11 5

Philips Semiconductors Product specification Voltage regulator diodes BZT03 series Per type when used as transient suppressor diodes Tj= 2 5°C unless otherwise specified. TYPE NUMBER REVERSE BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT TEST CURRENT CLAMPING VOLTAGE REVERSE CURRENT at STAND-OFF VOLTAGE V(BR)R (V) at Itest SZ (%/K) at Itest Itest (mA) V(CL)R (V) at IRSM (A) note 1 IR (µA) at VR (V) BZT03-C30 28 0.06 0.11 25 42.2 7.1 5 24 BZT03-C33 31 0.06 0.11 25 46.2 6.5 5 27 BZT03-C36 34 0.06 0.11 10 50.1 6.0 5 30 BZT03-C39 37 0.06 0.11 10 54.1 5.5 5 33 BZT03-C43 40 0.07 0.12 10 60.7 4.9 5 36 BZT03-C47 44 0.07 0.12 10 65.5 4.6 5 39 BZT03-C51 48 0.07 0.12 10 70.8 4.2 5 43 BZT03-C56 52 0.07 0.12 10 78.6 3.8 5 47 BZT03-C62 58 0.08 0.13 10 86.5 3.5 5 51 BZT03-C68 64 0.08 0.13 10 94.4 3.2 5 56 BZT03-C75 70 0.08 0.13 10 103.5 2.9 5 62 BZT03-C82 77 0.08 0.13 10 114.0 2.6 5 68 BZT03-C91 85 0.09 0.13 5 126 2.4 5 75 BZT03-C100 94 0.09 0.13 5 139 2.2 5 82 BZT03-C110 104 0.09 0.13 5 152 2.0 5 91 BZT03-C120 114 0.09 0.13 5 167 1.8 5 100 BZT03-C130 124 0.09 0.13 5 185 1.6 5 110 BZT03-C150 138 0.09 0.13 5 204 1.5 5 120 BZT03-C160 153 0.09 0.13 5 224 1.3 5 130

1996 Jun 11 6

Philips Semiconductors Product specification Voltage regulator diodes BZT03 series Note 1. Non-repetitive peak reverse current in accordance with“IEC 60-1, Section 8” (10/1000µs pulse); see Fig.4. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig.6. For more information please refer to the“General Part of associated Handbook”. BZT03-C180 168 0.09 0.13 5 249 1.2 5 150 BZT03-C200 188 0.09 0.13 5 276 1.1 5 160 BZT03-C220 208 0.09 0.13 2 305 1.0 5 180 BZT03-C240 228 0.09 0.13 2 336 0.9 5 200 BZT03-C270 251 0.09 0.13 2 380 0.8 5 220 BZT03-C300 280 0.09 0.13 2 419 0.72 5 240 BZT03-C330 310 0.09 0.13 2 459 0.65 5 270 BZT03-C360 340 0.09 0.13 2 498 0.60 5 300 BZT03-C390 370 0.09 0.13 2 537 0.56 5 330 BZT03-C430 400 0.09 0.13 2 603 0.50 5 360 BZT03-C470 440 0.09 0.13 2 655 0.45 5 390 BZT03-C510 480 0.09 0.13 2 707 0.42 5 430 SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W R th j-a thermal resistance from junction to ambient note 1 100 K/W TYPE NUMBER REVERSE BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT TEST CURRENT CLAMPING VOLTAGE REVERSE CURRENT at STAND-OFF VOLTAGE V(BR)R (V) at Itest SZ (%/K) at Itest Itest (mA) V(CL)R (V) at IRSM (A) note 1 IR (µA) at VR (V)

1996 Jun 11 7

Philips Semiconductors Product specification Voltage regulator diodes BZT03 series GRAPHICAL DATA Fig.2 Maximum total power dissipation as a function of temperature. Solid line: tie-point temperature; lead length = 10 mm. Dotted line: ambient temperature; PCB mounted as shown in Fig 6. handbook, halfpage 0 200

100 T (°C)

(W) MBH534 Tj=2 5°C prior to surge. Fig.3 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). handbook, halfpage 10−2 102 103 104 10−1 1t p (ms) PZSM (W) MBH535 Fig.4 Non-repetitive peak reverse current pulse definition. In accordance with“IEC 60-1, Section 8”. t1 =1 0µs. t2 = 1000µs. handbook, halfpage MGD521 IRSM (%) 100 t Tj=2 5°C. Fig.5 Forward current as a function of forward voltage; typical values. handbook, halfpage MBH536 IF (A)

1 VF (V)

1996 Jun 11 8

Philips Semiconductors Product specification Voltage regulator diodes BZT03 series Fig.6 Device mounted on a printed-circuit board. Dimensions in mm. handbook, halfpage MGA200

1996 Jun 11 9

Philips Semiconductors Product specification Voltage regulator diodes BZT03 series PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Dimensions in mm. The marking band indicates the cathode. Fig.7 SOD57. handbook, full pagewidth /#02 /#02 /#02 3.81 max MBC880 ka 28 min28 min 4.57 max 0.81 max