BZG03 PHILIPS | Alldatasheet

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Technical content

Preliminary specification Supersedes data of October 1993

1996 Jun 07

handbook, halfpage M3D168

1996 Jun 07 2

Philips Semiconductors Preliminary specification Voltage regulator diodes BZG03 series

FEATURES

  • Glass passivatedb
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • UL 94V-O classified plastic package
  • Zener working voltage range: 10 to 270 V for 35 types
  • Supplied in 12 mm embossed tape.

DESCRIPTION

DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. handbook, 4 columns MSA473 cathode band Top view Side view /,/, /,/, /,/, ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ptot total power dissipation T tp= 100°C; see Fig.2 − 3.00 W Ptot total power dissipation T amb =5 0°C; see Fig.2; device mounted on an Al2O 3 PCB (see Fig.5) − 1.25 W PZSM non-repetitive peak reverse power dissipation tp = 100µs; square pulse; Tj=2 5°C prior to surge; see Fig.3 − 600 W Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C

1996 Jun 07 3

Philips Semiconductors Preliminary specification Voltage regulator diodes BZG03 series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. Per type Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage I F = 0.5 A; see Fig.4 1.2 V TYPE No. SUFFIX (1) WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMPERATURE COEFFICIENT TEST CURRENT REVERSE CURRENT at REVERSE VOLTAGE VZ (V) at IZ rdif(Ω )a tIZ SZ (%/K) at IZ IZ (mA) IR (µA) VR (V) C13 12.4 13 14.1 5 10 0.05 0.10 50 2 10 C15 13.8 15 15.6 5 10 0.05 0.10 50 1 11 C16 15.3 16 17.1 6 15 0.06 0.11 25 1 12 C18 16.8 18 19.1 6 15 0.06 0.11 25 1 13 C20 18.8 20 21.2 6 15 0.06 0.11 25 1 15 C22 20.8 22 23.3 6 15 0.06 0.11 25 1 16 C24 22.8 24 25.6 7 15 0.06 0.11 25 1 18 C27 25.1 27 28.9 7 15 0.06 0.11 25 1 20 C30 28 30 32 8 15 0.06 0.11 25 1 22 C33 31 33 35 8 15 0.06 0.11 25 1 24 C36 34 36 38 21 40 0.06 0.11 10 1 27 C39 37 39 41 21 40 0.06 0.11 10 1 30 C43 40 43 46 24 45 0.07 0.12 10 1 33 C47 44 47 50 24 45 0.07 0.12 10 1 36 C51 48 51 54 25 60 0.07 0.12 10 1 39 C56 52 56 60 25 60 0.07 0.12 10 1 43 C62 58 62 66 25 80 0.08 0.13 10 1 47 C68 64 68 72 25 80 0.08 0.13 10 1 51 C75 70 75 79 30 100 0.08 0.13 10 1 56 C82 77 82 87 30 100 0.08 0.13 10 1 62 C91 85 91 96 60 200 0.09 0.13 5 1 68 C100 94 100 106 60 200 0.09 0.13 5 1 75 C110 104 110 116 80 250 0.09 0.13 5 1 82 C120 114 120 127 80 250 0.09 0.13 5 1 91

1996 Jun 07 4

Philips Semiconductors Preliminary specification Voltage regulator diodes BZG03 series Note 1. To complete the type number the suffix is added to the basic type number, e.g. BZG03-C130. THERMAL CHARACTERISTICS Notes 1. Device mounted on an Al2O 3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer≥35 µm, see Fig.5. 2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig.5. For more information please refer to the“General Part of associated Handbook”. C130 124 130 141 110 300 0.09 0.13 5 1 100 C150 138 150 156 130 300 0.09 0.13 5 1 110 C160 153 160 171 150 350 0.09 0.13 5 1 120 C180 168 180 191 180 400 0.09 0.13 5 1 130 C200 188 200 212 200 500 0.09 0.13 5 1 150 C220 208 220 233 350 750 0.09 0.13 2 1 160 C240 228 240 256 400 850 0.09 0.13 2 1 180 C270 251 270 289 450 1000 0.09 0.13 2 1 200 SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 25 K/W R th j-a thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W TYPE No. SUFFIX (1) WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMPERATURE COEFFICIENT TEST CURRENT REVERSE CURRENT at REVERSE VOLTAGE VZ (V) at IZ rdif(Ω )a tIZ SZ (%/K) at IZ IZ (mA) IR (µA) VR (V)

1996 Jun 07 5

Philips Semiconductors Preliminary specification Voltage regulator diodes BZG03 series GRAPHICAL DATA Fig.2 Maximum total power dissipation as a function of temperature. Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted on an Al2O 3 PCB as shown in Fig.5. handbook, halfpage 0 200 MBH451 Ptot (W)

100 T (°C)

Tj=2 5°C prior to surge. Fig.3 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). handbook, halfpage 10−2 102 103 104 10−1 1t p (ms) PZSM (W) MBH452 Tj=2 5°C. Fig.4 Forward current as a function of forward voltage; typical values. handbook, halfpage MBH453 IF (A)

1 VF (V)

Fig.5 Printed-circuit board for surface mounting. Dimensions in mm. MSB213 4.5 2.5 1.25

1996 Jun 07 6

Philips Semiconductors Preliminary specification Voltage regulator diodes BZG03 series PACKAGE OUTLINE Dimensions in mm. The marking band indicates the cathode. Fig.6 DO-214AC; SOD106. handbook, full pagewidth MSA414 4.5 4.3 5.5 5.1 3.3 2.7 2.3 2.0 2.8 2.4 1.6 1.4 0.05 0.2

1996 Jun 07 7

Philips Semiconductors Preliminary specification Voltage regulator diodes BZG03 series DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.