BZD27-C12

BZD27 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of October 1991

1996 Jun 10

ok, halfpage M3D121

1996 Jun 10 2

Philips Semiconductors Product specification Voltage regulator diodes BZD27 series

FEATURES

• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Zener working voltage range: 3.6 to 270 V for 46 types
• Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types
• Supplied in 8 mm embossed tape.

DESCRIPTION

Cavity free cylindrical glass SOD87 package through Implotec (1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD87) and symbol. handbook, 4 columns MAM249 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ptot total power dissipation T tp= 105°C; see Figs 2 and 3 BZD27-C3V6 to -C6V8 − 1.7 W BZD27-C7V5 to -C510 − 2.3 W Ptot total power dissipation PCB mounted (see Fig.7) BZD27-C3V6 to -C6V8 T amb =6 0°C; see Fig.2 − 0.8 W BZD27-C7V5 to -C510 T amb =5 5°C; see Fig.3 − 0.8 W PZSM non-repetitive peak reverse power dissipation tp = 100µs; square pulse; Tj=2 5°C prior to surge; see Figs.4 and 5 BZD27-C3V6 to -C6V8 − 300 W BZD27-C7V5 to -C510 − 300 W PRSM non-repetitive peak reverse power dissipation 10/1000µs exponential pulse (see Fig.8); Tj=2 5°C prior to surge BZD27-C7V5 to -C510 − 150 W Tstg storage temperature BZD27-C3V6 to -C6V8 −65 +200 °C BZD27-C7V5 to -C510 −65 +175 °C Tj junction temperature BZD27-C3V6 to -C6V8 −65 +200 °C BZD27-C7V5 to -C510 −65 +175 °C

1996 Jun 10 3

Philips Semiconductors Product specification Voltage regulator diodes BZD27 series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. Per type when used as voltage regulator diodes Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage I F = 0.2 A; see Fig.6 − 1.2 V TYPE No. SUFFIX (1) WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMPERATURE COEFFICIENT TEST CURRENT REVERSE CURRENT at REVERSE VOLTAGE VZ (V) at IZ rdif(Ω )a tIZ SZ (%/K) at IZ IZ (mA) IR (µA) VR (V) C13 12.4 13 14.1 5 10 0.05 0.10 50 2 10 C15 13.8 15 15.6 5 10 0.05 0.10 50 1 11 C16 15.3 16 17.1 6 15 0.06 0.11 25 1 12 C18 16.8 18 19.1 6 15 0.06 0.11 25 1 13 C20 18.8 20 21.2 6 15 0.06 0.11 25 1 15 C22 20.8 22 23.3 6 15 0.06 0.11 25 1 16 C24 22.8 24 25.6 7 15 0.06 0.11 25 1 18 C27 25.1 27 28.9 7 15 0.06 0.11 25 1 20 C30 28 30 32 8 15 0.06 0.11 25 1 22 C33 31 33 35 8 15 0.06 0.11 25 1 24 C36 34 36 38 21 40 0.06 0.11 10 1 27 C39 37 39 41 21 40 0.06 0.11 10 1 30 C43 40 43 46 24 45 0.07 0.12 10 1 33 C47 44 47 50 24 45 0.07 0.12 10 1 36

1996 Jun 10 4

Philips Semiconductors Product specification Voltage regulator diodes BZD27 series Note 1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51. C51 48 51 54 25 60 0.07 0.12 10 1 39 C56 52 56 60 25 60 0.07 0.12 10 1 43 C62 58 62 66 25 80 0.08 0.13 10 1 47 C68 64 68 72 25 80 0.08 0.13 10 1 51 C75 70 75 79 30 100 0.08 0.13 10 1 56 C82 77 82 87 30 100 0.08 0.13 10 1 62 C91 85 91 96 60 200 0.09 0.13 5 1 68 C100 94 100 106 60 200 0.09 0.13 5 1 75 C110 104 110 116 80 250 0.09 0.13 5 1 82 C120 114 120 127 80 250 0.09 0.13 5 1 91 C130 124 130 141 110 300 0.09 0.13 5 1 100 C150 138 150 156 130 300 0.09 0.13 5 1 110 C160 153 160 171 150 350 0.09 0.13 5 1 120 C180 168 180 191 180 400 0.09 0.13 5 1 130 C200 188 200 212 200 500 0.09 0.13 5 1 150 C220 208 220 233 350 750 0.09 0.13 2 1 160 C240 228 240 256 400 850 0.09 0.13 2 1 180 C270 251 270 289 450 1000 0.09 0.13 2 1 200 TYPE No. SUFFIX (1) WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMPERATURE COEFFICIENT TEST CURRENT REVERSE CURRENT at REVERSE VOLTAGE VZ (V) at IZ rdif(Ω )a tIZ SZ (%/K) at IZ IZ (mA) IR (µA) VR (V)

1996 Jun 10 5

Philips Semiconductors Product specification Voltage regulator diodes BZD27 series Per type when used as transient suppressor diodes Tj= 2 5°C unless otherwise specified. TYPE NUMBER REVERSE BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT TEST CURREN T CLAMPING VOLTAGE REVERSE CURRENT at STAND-OFF VOLTAGE V(BR)R (V) at Itest SZ (%/K) at Itest Itest (mA) V(CL)R (V) at IRSM (A) note 1 IR (µA) at VR (V) BZD27-C30 28 0.06 0.11 25 42.2 3.6 5 24 BZD27-C33 31 0.06 0.11 25 46.2 3.2 5 27 BZD27-C36 34 0.06 0.11 10 50.1 3.0 5 30 BZD27-C39 37 0.06 0.11 10 54.1 2.8 5 33 BZD27-C43 40 0.07 0.12 10 60.7 2.5 5 36 BZD27-C47 44 0.07 0.12 10 65.5 2.3 5 39 BZD27-C51 48 0.07 0.12 10 70.8 2.1 5 43 BZD27-C56 52 0.07 0.12 10 78.6 1.9 5 47 BZD27-C62 58 0.08 0.13 10 86.5 1.7 5 51 BZD27-C68 64 0.08 0.13 10 94.4 1.6 5 56 BZD27-C75 70 0.08 0.13 10 103.5 1.5 5 62 BZD27-C82 77 0.08 0.13 10 114 1.3 5 68 BZD27-C91 85 0.09 0.13 5 126 1.2 5 75 BZD27-C100 94 0.09 0.13 5 139 1.1 5 82 BZD27-C110 104 0.09 0.13 5 152 1.0 5 91 BZD27-C120 114 0.09 0.13 5 167 0.90 5 100 BZD27-C130 124 0.09 0.13 5 185 0.81 5 110 BZD27-C150 138 0.09 0.13 5 204 0.73 5 120 BZD27-C160 153 0.09 0.13 5 224 0.67 5 130

1996 Jun 10 6

Philips Semiconductors Product specification Voltage regulator diodes BZD27 series Note 1. Non-repetitive peak reverse current in accordance with“IEC 60-1, Section 8” (10/1000µs pulse); see Fig.8. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig.7. For more information please refer to the“General Part of associated Handbook”. BZD27-C180 168 0.09 0.13 5 249 0.60 5 150 BZD27-C200 188 0.09 0.13 5 276 0.54 5 160 BZD27-C220 208 0.09 0.13 2 305 0.50 5 180 BZD27-C240 228 0.09 0.13 2 336 0.45 5 200 BZD27-C270 251 0.09 0.13 2 380 0.40 5 220 BZD27-C300 280 0.09 0.13 2 419 0.36 5 240 BZD27-C330 310 0.09 0.13 2 459 0.33 5 270 BZD27-C360 340 0.09 0.13 2 498 0.30 5 300 BZD27-C390 370 0.09 0.13 2 537 0.28 5 330 BZD27-C430 400 0.09 0.13 2 603 0.25 5 360 BZD27-C470 440 0.09 0.13 2 655 0.23 5 390 BZD27-C510 480 0.09 0.13 2 707 0.21 5 430 SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point BZD27-C3V6 to -C6V8 55 K/W BZD27-C7V5 to -C510 30 K/W R th j-a thermal resistance from junction to ambient note 1 BZD27-C3V6 to -C6V8 175 K/W BZD27-C7V5 to -C510 150 K/W TYPE NUMBER REVERSE BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT TEST CURREN T CLAMPING VOLTAGE REVERSE CURRENT at STAND-OFF VOLTAGE V (BR)R (V) at Itest SZ (%/K) at Itest Itest (mA) V(CL)R (V) at IRSM (A) note 1 IR (µA) at VR (V)

1996 Jun 10 7

Philips Semiconductors Product specification Voltage regulator diodes BZD27 series GRAPHICAL DATA Fig.2 Maximum total power dissipation as a function of temperature. Types BZD27-C3V6 to -C6V8 Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted as shown in Fig.7. handbook, halfpage 0 200 MBH454 Ptot (W)

100 T (°C)

Fig.3 Maximum total power dissipation as a function of temperature. Types BZD27-C7V5 to -C510 Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted as shown in Fig.7. handbook, halfpage 0 200 MBH455 Ptot (W) Tj=2 5°C prior to surge. See also Fig 5. Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). handbook, halfpage 10−2 102 103 104 10−1 1 tp (ms) PZSM (W) MGD524 Tj=2 5°C prior to surge. Fig.5 Maximum non-repetitive peak reverse power dissipation as a function of nominal working voltage. handbook, halfpage 0 3V9 4V7 6V8 400 300 100 200 MGD525 5V6 VZnom (V) 3V6 4V3 6V2 5V1 PZSM (W)

1996 Jun 10 8

Philips Semiconductors Product specification Voltage regulator diodes BZD27 series Tj=2 5°C. Fig.6 Forward current as a function of forward voltage; typical values. handbook, halfpage IF (A) MGD520

1 VF (V)

Fig.7 Printed-circuit board for surface mounting. Dimensions in mm. MSB213 4.5 2.5 1.25 Fig.8 Non-repetitive peak reverse current pulse definition. In accordance with“IEC 60-1, Section 8”. t1 =1 0µs. t2 = 1000µs. handbook, halfpage MGD521 IRSM (%) 100 t

1996 Jun 10 9

Philips Semiconductors Product specification Voltage regulator diodes BZD27 series PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Dimensions in mm. The marking band indicates the cathode. Fig.9 SOD87. handbook, full pagewidth MBA505 0.3 O 2.05 0.05D = 3.5 0.2 D1 = 1.9 0.1O