DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
A A B C D DO-15 Dim Min Max A 25.40 /c190 B 5.50 7.62 C 0.686 0.889 D 2.60 3.60 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ T A = 25/c176C unless otherwise specified /c183 /c183 /c183 /c183 Mechanical Data /c183 Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Case: Molded Plastic Parameter Test Conditions Type Symbol Value Unit Reverse voltage BYX82 V R RRM 200 V g =Repetitive peak reverse voltage BYX83 V R RRM 400 V BYX84 V R RRM 600 V BYX85 V R RRM 800 V BYX86 V R RRM 1000 V Peak forward surge current t p =10ms, half sinewave I FSM A Repetitive peak forward current I FRM A Average forward current T amb /C012045/C0176C I FAV A i *t–rating i A Junction and storage temperature range T j stg –65...+175 /C0176C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage I F =1A V F 0.9 1.0 V Reverse current V R RRM I R 0.1 /C0109A V R RRM , T j =100/C0176C I R /C0109A Diode capacitance V R =4V, f=0.47MHz C D pF Reverse recovery time I F =0.5A, I R =1A, i R =0.25A t rr /C0109s Reverse recovery charge I F R =1A, di/dt=5A//C0109s Q rr /C0109C BYX82-BYX86 2.0A Axial Leaded Silicon Mesa Rectifiers
Figure 6. Thermal Response