BYW100-200 TAYCHIPST | Alldatasheet
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THE SPECIFICATIONS AND CURVES 200V 1.5A BYW100-200 Web Site: www.taychipst.com1 of 2
FEATURES
E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES ENABLE THE DETERMINATION OF trr AND I RM AT 100°C UNDER USERS CONDITIONS Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 200 V I FRM Repetitive peak forward current * tp = 5 µs F = 1KHz 80 A I F(AV) Average forward current * Ta = 95 °C δ = 0.5 1.5 A I FSM Surge non repetitive forward current tp=10 ms sinusoidal50 A T stg Storage temperature range -65 +150 °C Tj Maximum operating junction temperature + 150 °C T L Maximum lead temperature for soldering during 10s at 4mm from case 230 °C ABSOLUTE RATINGS (limiting values) Symbol Parameter Tests conditions Min. Typ. Max. Unit I R * Reverse leakage current V R = V RRM Tj = 25°C 10 µA Tj = 100°C 0.5 mA V F ** Forward voltage drop I F = 4.5 A Tj = 25 °C 1.2 V I F = 1.5 A Tj = 100 °C 0.78 0.85 STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions Min. Typ. Max. Unit trr I F = 1 A dI F /dt = - 50 A/µs V R = 30 V Tj = 25°C 35 ns tfr I F = 1.5 A dI F /dt = -50 A/µs Measured at 1.1 x V F max. Tj = 25°C 30 ns V FP I F = 1.5 A dI F /dt = -50 A/µs Tj = 25 °C 5V Qrr I F = 1.5 A dI F /dt = -20 A/µs V R ≤ 30 V Tj = 25°C 10 nC RECOVERY CHARACTERISTICS
RATINGS AND CHARACTERISTIC CURVES BYW100-200 E-mail: sales@taychipst.com Web Site: www.taychipst.com 2 of 2 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 PF(av)(W) δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 δ = 0.1 T δ =tp/T tp IF(av) (A) Fig. 1: Average forward power dissipation versus average forward current. 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IF(av)(A) Rth(j-a)=100°C/W Rth(j-a)=Rth(j-l) Tamb(°C) Fig. 2: Average forward current versus ambient temperature (δ=0.5). 5 1 01 52 02 5 100 110 Rth(°C/W) Rth(j-a) Rth(j-l) Lleads(mm) Fig. 3: Thermal resistance versus lead length. 0.10 1.00 10.00 50.00 IFM(A) Tj=25°C Tj=100°C Tj=100°C (Typical values) VFM(V) Fig. 5: Forward voltage drop versus forward current (maximum values). 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 Zth(j-a)/Rth(j-a) Single pulse δ = 0.1 δ = 0.2 δ = 0.5 tp(s) Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad 1 10 100 200 VR(V) C(pF) F=1MHz Tj=25°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). 1 10 100 100 150 trr(ns) IF=1.5A VR=30V 90% confidence Tj=100°C Tj=25°C dIF/dt(A/µs) Fig. 7: Reverse recovery time versus dI F /dt . 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 IRM(A) IF=1.5A VR=30V 90% confidence Tj=100°C Tj=25°C dIF/dt(A/µs) Fig. 8: Peak reverse recovery current versus dI F /dt. 200V 1.5A BYW100-200