BYV99 PHILIPS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Product specification Supersedes data of May 1993

1996 Feb 19

controlled avalanche rectifier handbook, 2 columns M3D116

1996 Feb 19 2

Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYV99

FEATURES

  • Glass passivated
  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energy absorption capability
  • Available in ammo-pack.

DESCRIPTION

Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka /#03/#03/#03 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 600 V VR continuous reverse voltage − 600 V IF(AV) average forward current T tp=5 0°C; lead length = 10 mm see Fig. 2; averaged over any 20 ms period; see also Fig. 6 − 1.00 A T amb =6 0°C; PCB mounting (see Fig.10); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 − 0.55 A I FRM repetitive peak forward current Ttp=5 0°C; see Fig. 4 − 9A Tamb =6 0°C; see Fig. 5 − 5A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T j max prior to surge; VR =V RRMmax − 20 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj=T j max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C

1996 Feb 19 3

Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYV99

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig.10. For more information please refer to the“General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage I F = 1 A; Tj=T j max; see Fig. 7 −− 1.5 V IF = 1 A; see Fig. 7 −− 2.7 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA 700 −− V IR reverse current V R =V RRMmax ; see Fig. 8 −− 5 µA VR =V RRMmax ; Tj= 150°C; see Fig. 8 −− 75 µA trr reverse recovery time when switched from I F = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig. 12 −− 15 ns C d diode capacitance f = 1 MHz; V R = 0 V; see Fig. 9 − 75 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt =−1A /µs; see Fig.11 −− 3A / µs SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W R th j-a thermal resistance from junction to ambient note 1 100 K/W dIR

1996 Feb 19 4

Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYV99 GRAPHICAL DATA a = 1.42; VR =V RRMmax ;δ = 0.5. Switched mode application. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 o 1.2 (A) IF(AV) 0.4 0.8 200 MRC270 100 Ttp ( C) a = 1.42; VR =V RRMmax ;δ = 0.5. Device mounted as shown in Fig.10. Switched mode application. Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 0.8 0.6 0.2 0.4 MRC269 100 o (A) IF(AV) Tamb ( C) Ttp=5 0°C; Rth j-tp= 46 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 600 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth10 10 10 1 10 10 2 103 104 MRC272 tp (ms) –2 –1 IFRM (A) 0.1 0.2 0.5 1.0 δ = 0.05

1996 Feb 19 5

Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYV99 Tamb =6 0°C; Rth j-a= 100 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 600 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth5.0 10 10 1 10 10 2 103 104 MRC271 1.0 2.0 3.0 4.0 tp (ms) –2 –1 IFRM (A) 0.5 1.0 0.1 0.2 δ = 0.05 a=I F(RMS) /IF(AV); VR =V RRMmax ;δ = 0.5. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. handbook, halfpage P (W) MGC593

1 IF(AV) (A)

2 1.57 1.42 a=3 2.5 Dotted line: Tj= 150°C. Solid line: Tj=2 5°C. Fig.7 Forward current as a function of forward voltage; maximum values. handbook, halfpage (A) IF VF (V) MRA948

1996 Feb 19 6

Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYV99 VR =V RRMmax . Fig.8 Reverse current as a function of junction temperature; maximum values. handbook, halfpage 2000 MGC594 (A) IR 102 100 oTj ( C) f = 1 MHz; Tj=2 5°C. Fig.9 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage MGC592 10 10 2 103 10 2 (pF) C d VR (V) Fig.10 Device mounted on a printed-circuit board. Dimensions in mm. handbook, halfpage MGA200 Fig.11 Reverse recovery definitions. andbook, halfpage 10% 100% dI dt t trr IF IR MGC499 F dI dt R

1996 Feb 19 7

Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYV99 Fig.12 Test circuit and reverse recovery time waveform and definition. Input impedance oscilloscope: 1 MΩ , 22 pF; tr ≤ 7 ns. Source impedance: 50Ω ; tr ≤ 15 ns. handbook, full pagewidth 10 Ω 1 Ω 50 Ω 25 V DUT MAM057 trr 0.5 0.5 1.0 IF (A) IR (A) t 0.25

1996 Feb 19 8

Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYV99 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.13 SOD57. Dimensions in mm. The marking band indicates the cathode. handbook, full pagewidth /#02 /#02 /#02 3.81 max MBC880 ka 28 min28 min 4.57 max 0.81 max