BYV97 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of February 1994

1996 Jun 07

controlled avalanche rectifiers handbook, 2 columns M3D116

1996 Jun 07 2

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series

FEATURES

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energy absorption capability
  • Available in ammo-pack.

DESCRIPTION

Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka /#03/#03/#03 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYV97F − 1200 V BYV97G − 1400 V VR continuous reverse voltage BYV97F − 1200 V BYV97G − 1400 V IF(AV) average forward current T tp=6 0°C; lead length = 10 mm see Fig.2; averaged over any 20 ms period; see also Fig.6 − 1.6 A I F(AV) average forward current T amb =5 0°C; PCB mounting (see Fig. 12); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 0.9 A I FRM repetitive peak forward current Ttp=6 5°C; see Fig.4 − 15 A Tamb =6 5°C; see Fig.5 − 8A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T j max prior to surge; VR =V RRMmax − 20 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj=T j max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.7 −65 +175 °C

1996 Jun 07 3

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig. 12. For more information please refer to the“General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage I F = 3 A; Tj=T j max; see Fig.8 1.35 V IF = 3 A; see Fig.8 −− 1.65 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV97F 1300 −− V BYV97G 1500 −− V IR reverse current V R =V RRMmax ; see Fig.9 −− 1 µA VR =V RRMmax ; Tj= 165°C; see Fig.9 −− 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.14 −− 500 ns C d diode capacitance f = 1 MHz; V R = 0 V; see Fig.11 − 35 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt =−1A /µs; see Figs 10 and 13 −− 5A / µs SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W R th j-a thermal resistance from junction to ambient note 1 100 K/W dIR

1996 Jun 07 4

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series GRAPHICAL DATA a = 1.57; VR =V RRMmax ;δ = 0.5. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 200 2.0 0.4 1.6 MBD419 100 IF(AV) (A) T ( C)o tp 0.8 1.2 lead length 10 mm a = 1.57; VR =V RRMmax ;δ = 0.5. Device mounted as shown in Fig.12. Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 0.4 MBD420 100 IF(AV) (A) 0.8 1.2 T ( C)o amb Ttp=6 5°C; Rth j-tp= 46 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1400 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 10 2 11 0 1 0 2 10 3 10 4 MBD448 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5

1996 Jun 07 5

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series Tamb =6 5°C; Rth j-a= 100 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1400 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 10 2 11 0 1 0 2 10 3 10 4 MBD442 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5 a=I F(RMS) /IF(AV); VR =V RRMmax ;δ = 0.5. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. handbook, halfpage MBD428

1 I (A)F(AV)

P (W) a = 3 2.5 2 1.57 1.42 Solid line = VR . Dotted line = VRRM ;δ = 0.5. Fig.7 Maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage200 0 2000 MBD433 1000 100 V (V)R T j ( C)o BYV97F BYV97G

1996 Jun 07 6

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series Dotted line: Tj= 175°C. Solid line: Tj=2 5°C. Fig.8 Forward current as a function of forward voltage; maximum values. handbook, halfpage

012 VF (V) 3

(A) MGD316 VR =V RRMmax . Fig.9 Reverse current as a function of junction temperature; maximum values. handbook, halfpage103 102 10 1 2000 MGC574

100 Tj ( C)o

(µA) Tj=2 5°C. For definitions see Fig. 13. Fig.10 Maximum reverse recovery time as a function of the rate of fall of forward current. handbook, full pagewidth MBD439 10210110 1 trr (µs) 10 1 dl /dt (A/µs)F I =F 5 A 1 A

1996 Jun 07 7

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series f = 1 MHz; Tj=2 5°C. Fig.11 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage MGD317 102 102 103 VR (V) C d (pF) Fig.12 Device mounted on a printed-circuit board. Dimensions in mm. handbook, halfpage MGA200 Fig.13 Reverse recovery definitions. andbook, halfpage 10% 100% dI dt t trr IF IR MGC499 F dI dt R

1996 Jun 07 8

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series handbook, full pagewidth 10 Ω 1 Ω 50 Ω 25 V DUT MAM057 trr 0.5 0.5 IF (A) IR (A) t 0.25 Fig.14 Test circuit and reverse recovery time waveform and definition. Input impedance oscilloscope: 1 MΩ , 22 pF; tr < 7 ns. Source impedance: 50Ω ; tr <1 5n s .

1996 Jun 07 9

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.15 SOD57. Dimensions in mm. The marking band indicates the cathode. handbook, full pagewidth /#02 /#02 /#02 3.81 max MBC880 ka 28 min28 min 4.57 max 0.81 max