BYV72F PHILIPS | Alldatasheet
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Philips Semiconductors Product specification Rectifier diodes BYV72F series ultrafast GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency,SYMBOL PARAMETER MAX. MAX. MAX. UNIT dual, rectifier diodes in a full pack, plastic envelope, featuring low BYV72F- 100 150 200 forward voltage drop, ultra-fast V RRM Repetitive peak reverse 100 150 200 V recovery times and soft recovery voltage characteristic. They are intended for VF Forward voltage 0.90 0.90 0.90 V use in switched mode power supplies IO(AV) Output current (both 20 20 20 A and high frequency circuits in general diodes conducting) where low conduction and switching trr Reverse recovery time 28 28 28 ns losses are essential. PINNING - SOT199 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -100 -150 -200 VRRM Repetitive peak reverse voltage - 100 150 200 V VRWM Crest working reverse voltage - 100 150 200 V VR Continuous reverse voltage1 - 100 150 200 V IO(AV) Output current (both diodes square wave; δ = 0.5; - 20 A conducting)2 Ths ≤ 78 ˚C sinusoidal; a = 1.57; - 20 A Ths ≤ 78 ˚C IO(RMS) RMS forward current - 20 A IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A per diode T hs ≤ 78 ˚C IFSM Non-repetitive peak forward t = 10 ms - 150 A current per diode t = 8.3 ms - 160 A sinusoidal; with reapplied V RWM(max) I2tI 2t for fusing t = 10 ms - 112 A 2s Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C 12 3 case k a1 a2 1 Ths ≤ 125˚C for thermal stability. 2 Neglecting switching and reverse current losses. October 1994 1 Rev 1.100
Philips Semiconductors Product specification Rectifier diodes BYV72F series ultrafast ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to both diodes conducting heatsink with heatsink compound - - 4.0 K/W without heatsink compound - - 8.0 K/W per diode with heatsink compound - - 5.0 K/W without heatsink compound - - 9.0 K/W R th j-a Thermal resistance junction to in free air - 35 - K/W ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage (per diode) IF = 15 A; Tj = 150˚C - 0.83 0.90 V IF = 15 A - 0.95 1.05 V IF = 30 A - 1.00 1.20 V IR Reverse current (per diode) VR = VRWM ; Tj = 100 ˚C - 0.5 1 mA VR = VRWM - 10 100 µA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Q s Reverse recovery charge (per IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 1 5 n C diode) trr Reverse recovery time (per IF = 1 A; VR ≥ 30 V; - 20 28 ns diode) -dI F/dt = 100 A/µs Irrm Peak reverse recovery current IF = 10 A; VR ≥ 30 V; - 2 2.4 A (per diode) -dI F/dt = 50 A/µs; Tj = 100 ˚C Vfr Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs- 1 - V diode) October 1994 2 Rev 1.100
Philips Semiconductors Product specification Rectifier diodes BYV72F series ultrafast Fig.1. Definition of trr, Qs and Irrm Fig.2. Definition of Vfr Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.5. Maximum trr at Tj = 25 ˚C; per diode Fig.6. Maximum trr at Tj = 100 ˚C; per diode Q s 100%10% time dI dt F I R IF I rrm trr 0 5 10 150 1.9 2.2 2.8 BYV72 IF(AV) / A PF / W Ths(max) / C 150 125 100 a = 1.57 Vo = 0.705 V Rs = 0.013 Ohms time time V F V fr V F IF trr / ns 1 10 100 1000 100 dIF/dt (A/us) IF=1A IF=20A 0 5 10 15 20 250 D = 1.0 0.5 0.2 0.1 BYV72 Rs = 0.0130 Ohms Vo = 0.7050 V IF(AV) / A PF / W D = tp tp T T t I Ths(max) / C 150 125 100 trr / ns 1 10 100 1000 100 -dIF/dt (A/us) IF=1A IF=20A Tj = 100 C October 1994 3 Rev 1.100
Philips Semiconductors Product specification Rectifier diodes BYV72F series ultrafast Fig.7. Maximum Irrm at Tj = 25 ˚C; per diode Fig.8. Maximum Irrm at Tj = 100 ˚C; per diode Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.10. Maximum Qs at Tj = 25 ˚C; per diode Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp). 0.1 0.01 Irrm / A 1 10 100 -dIF/dt (A/us) IF=1A IF=20A 100 1.0 1.0 10 100 -dIF/dt (A/us) Qs / nC IF=20A 10A 0.1 0.01 IF / A 1 10 100 -dIF/dt (A/us) IF=1A IF=20A Tj = 100 C 0.1 0.01 10 s0.11 ms10 us tp / s Zth (K/W) tp t D P
0 VF / V
0.5 1.5 1.0 Tj = 150 C Tj = 25 C IF / A max typ October 1994 4 Rev 1.100
Philips Semiconductors Product specification Rectifier diodes BYV72F series ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". 6.2 5.8 3.5 21.5 max 15.7 min 12 3 2.1 max 1.2 1.0 0.4 2.0 0.7 max o 3.2 5.2 max 3.1 3.37.3 15.3 max 0.7 5.45 seating plane 5.45 3.5 max not tinned M October 1994 5 Rev 1.100
Philips Semiconductors Product specification Rectifier diodes BYV72F series ultrafast DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Rev 1.100