BYV72EW PHILIPS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Philips Semiconductors Product specification Rectifier diodes BYV72EW series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA

  • Low forward volt drop V R = 150 V/ 200 V
  • Fast switching
  • Soft recovery characteristic V F ≤ 0.85 V
  • Reverse surge capability
  • High thermal cycling performance I O(AV) = 30 A
  • Low thermal resistance IRRM = 0.2 A trr ≤ 28 ns GENERAL DESCRIPTION PINNING SOT429 (TO247) Dual, ultra-fast, epitaxial rectifierPIN DESCRIPTION diodes intended for use as output rectifiers in high frequency switched 1 anode 1 mode power supplies. 2 cathode The BYV72EW series is supplied in the conventional leaded SOT429 3 anode 2 (TO247) package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV72EW -150 -200 VRRM Peak repetitive reverse voltage - 150 200 V VRWM Crest working reverse voltage - 150 200 V VR Continuous reverse voltage Tmb ≤ 144˚C - 150 200 V IO(AV) Average rectified output current square wave - 30 A (both diodes conducting)1 δ = 0.5; Tmb ≤ 104 ˚C IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A per diode T mb ≤ 104 ˚C IFSM Non-repetitive peak forward t = 10 ms - 150 A current per diode t = 8.3 ms - 160 A sinusoidal; with reapplied VRWM(max) IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A per diode IRSM Non-repetitive peak reverse tp = 100 µs - 0.2 A current per diode Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C 1 Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k Ω k a1 a2 2 31 October 1998 1 Rev 1.200

Philips Semiconductors Product specification Rectifier diodes BYV72EW series ultrafast, rugged THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to per diode - - 2.4 K/W mounting base both diodes conducting - - 1.4 K/W R th j-a Thermal resistance junction to in free air - 45 - K/W ambient

ELECTRICAL CHARACTERISTICS

characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 15 A; Tj = 150˚C - 0.83 0.90 V IF = 15 A - 0.95 1.05 V IF = 30 A - 1.00 1.20 V IR Reverse current V R = VRWM ; Tj = 100 ˚C - 0.5 1 mA VR = VRWM - 10 100 µA Q s Reverse recovery charge I F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 1 5 n C trr1 Reverse recovery time I F = 1 A; VR ≥ 30 V; - 20 28 ns -dIF/dt = 100 A/µs trr2 Reverse recovery time I F = 0.5 A to IR = 1 A; Irec = 0.25 A - 13 22 ns Vfr Forward recovery voltage I F = 1 A; dIF/dt = 10 A/µs- 1 - V October 1998 2 Rev 1.200

Philips Semiconductors Product specification Rectifier diodes BYV72EW series ultrafast, rugged Fig.1. Definition of trr1, Qs and Irrm Fig.2. Definition of Vfr Fig.3. Circuit schematic for trr2 Fig.4. Definition of trr2 Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Q s 100%10% time dI dt F I R IF I rrm trr I = 1AR recI = 0.25A trr2 0.5A IF IR time time V F V fr V F IF 0 5 10 15 20 250 0.5 0.2 0.1 BYV42 IF(AV) / A PF / W D = 1.0 Tmb(max) / C 150 138 126 114 102Vo = 0.705 V Rs = 0.0097 Ohms D = tp tp T T t I shunt Current to ’scope D.U.T. Voltage Pulse Source R 0 5 10 150 1.9 2.2 2.8 BYV42 IF(AV) / A PF / W Tmb(max) / C 150 138 126 114 a = 1.57Vo = 0.705 V Rs = 0.0097 Ohms October 1998 3 Rev 1.200

Philips Semiconductors Product specification Rectifier diodes BYV72EW series ultrafast, rugged Fig.7. Maximum trr at Tj = 25 ˚C; per diode Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.10. Maximum Qs at Tj = 25 ˚C; per diode Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp). trr / ns 1 10 100 1000 100 dIF/dt (A/us) IF=1A IF=20A 100 1.0 1.0 10 100 -dIF/dt (A/us) Qs / nC IF=20A 10A 0.1 0.01 Irrm / A 1 10 100 -dIF/dt (A/us) IF=1A IF=20A 1us 10us 100us 1ms 10ms 100ms 1s 10s0.001 0.01 0.1 BYV42Epulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T TP t D

0 VF / V

0.5 1.5 1.0 Tj = 150 C Tj = 25 C IF / A max typ October 1998 4 Rev 1.200

Philips Semiconductors Product specification Rectifier diodes BYV72EW series ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 5 g Fig.12. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". 5.3 4.0 max 15.5 min 1 2.2 max 0.4 2.5 0.9 max 5.3 max 3.5 16 max 5.45 seating plane 5.45 M o max 15.5 max 3.2 max 2 3 1.1 3.5 1.8 7.3 max October 1998 5 Rev 1.200

Philips Semiconductors Product specification Rectifier diodes BYV72EW series ultrafast, rugged DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 6 Rev 1.200