BYV40E PHILIPS | Alldatasheet

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Technical content

Philips Semiconductors Product specification Rectifier diodes BYV40E series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA

  • Low forward volt drop VR = 150 V/ 200 V
  • Fast switching
  • Soft recovery characteristic VF ≤ 0.7 V
  • Reverse surge capability
  • High thermal cycling performance IO(AV) = 1.5 A
  • low profile surface mounting package IRRM = 0.1 A trr ≤ 25 ns GENERAL DESCRIPTION PINNING SOT223 Dual, common cathode, ultra-fast,PIN DESCRIPTION epitaxial rectifier diodes intended for use as output rectifiers in high 1 anode 1 frequency switched mode power supplies. 2 cathode The BYV40E series is supplied in 3 anode 2 the SOT223 surface mounting package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV40E -150 -200 VRRM Peak repetitive reverse voltage - 150 200 V VRWM Crest working reverse voltage - 150 200 V VR Continuous reverse voltage Tsp ≤ 120˚C - 150 200 V IO(AV) Average rectified output current square wave; δ = 0.5; - 1.5 A (both diodes conducting)1 Tsp ≤ 132˚C IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 1.5 A per diode T sp ≤ 132 ˚C IFSM Non-repetitive peak forward tp = 10 ms - 6 A current per diode t p = 8.3 ms - 6.6 A sinusoidal; Tj = 150˚C prior to surge; with reapplied V RWM(max) IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.1 A per diode IRSM Non-repetitive peak reverse tp = 100 µs - 0.1 A current per diode Tstg Storage temperature -65 150 ˚C Tj Operating junction temperature - 150 ˚C k a1 a2 1 23

1 Neglecting switching and reverse current losses

September 1998 1 Rev 1.300

Philips Semiconductors Product specification Rectifier diodes BYV40E series ultrafast, rugged ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k Ω THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-sp Thermal resistance one or both diodes conducting - - 15 K/W junction to solder point R th j-a Thermal resistance pcb mounted; minimum footprint - 156 - K/W junction to ambient pcb mounted; pad area as in fig:11 - 70 - K/W

ELECTRICAL CHARACTERISTICS

characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 0.5 A; Tj = 150˚C - 0.50 0.7 V IF = 1.5 A - 0.82 1.0 V IR Reverse current V R = VRWM ; Tj = 100 ˚C - 100 300 µA VR = VRWM -5 1 0 µA Q s Reverse recovery charge I F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- - 1 1 n C trr1 Reverse recovery time I F = 1 A; VR ≥ 30 V; - - 25 ns -dIF/dt = 100 A/µs trr2 Reverse recovery time I F = 0.5 A to IR = 1 A; Irec = 0.25 A - 10 20 ns Vfr Forward recovery voltage I F = 2 A; dIF/dt = 20 A/µs- 3 - V September 1998 2 Rev 1.300

Philips Semiconductors Product specification Rectifier diodes BYV40E series ultrafast, rugged Fig.1. Definition of trr1, Qs and Irrm Fig.2. Definition of Vfr Fig.3. Circuit schematic for trr2 Fig.4. Definition of trr2 Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Q s 100%10% time dI dt F I R IF I rrm trr I = 1AR recI = 0.25A trr2 0.5A IF IR time time V F V fr V F IF 0.2 0.4 0.6 0.8 D = 1.0 0.5 0.2 0.1 BYV40 IF(AV) / A PF / W Tsp(max) / C 150 147 144 141 138 135 D = tp tp T T t I Vo = 0.66 V Rs = 0.08 Ohms shunt Current to ’scope D.U.T. Voltage Pulse Source R 0.1 0.2 0.3 0.4 0.5 0.6 0.7 a = 1.57 1.9 2.2 2.8 BYV40 IF(AV) / A PF / W Tsp(max) / C 150 148.5 147 145.5 144 142.5 141 139.5 Vo = 0.66 V Rs = 0.08 Ohms September 1998 3 Rev 1.300

Philips Semiconductors Product specification Rectifier diodes BYV40E series ultrafast, rugged Fig.7. Maximum trr at Tj = 25 ˚C; per diode Fig.8. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.9. Maximum Qs at Tj = 25 ˚C; per diode Fig.10. Transient thermal impedance; per diode; Zth j-sp = f(tp). trr / ns 11 0 100 1000 100 IF = 2A dIF/dt (A/us) Qs / nC 100 1 10 100 IF=2A dIF/dt(A/us) IF=1A 0 0.5 1.0 1.5 VF / V IF / A TYP MAX Tj=25C Tj=150C 1us 10us 100us 1ms 10ms 100ms 1s 10s0.01 0.1 100 BYV40Epulse width, tp (s) Transient thermal impedance, Zth j-sp (K/W) D = tp tp T TP t D September 1998 4 Rev 1.300

Philips Semiconductors Product specification Rectifier diodes BYV40E series ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 0.11 g Fig.11. SOT223 surface mounting package. Notes 1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines". Order code: 9397 750 00505. 2. Epoxy meets UL94 V0 at 1/8". 6.7 6.3 3.1 2.9 1 23 2.31.05 0.85 0.80 0.60 4.6 3.7 3.3 7.3 6.7 B A 0.10 0.02 1316 max 1.8 max max 0.32 0.24 (4x) BM0.1 AM0.2 September 1998 5 Rev 1.300

Philips Semiconductors Product specification Rectifier diodes BYV40E series ultrafast, rugged DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 6 Rev 1.300