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Product speciﬁcation Supersedes data of 1996 May 30

1996 Jul 01

controlled avalanche rectifiers handbook, 2 columns M3D116

1996 Jul 01 2

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series

FEATURES

Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
Available in ammo-pack.

DESCRIPTION

Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka /#03/#03/#03 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYV36A − 200 V BYV36B − 400 V BYV36C − 600 V BYV36D − 800 V BYV36E − 1000 V BYV36F − 1200 V BYV36G − 1400 V VR continuous reverse voltage BYV36A − 200 V BYV36B − 400 V BYV36C − 600 V BYV36D − 800 V BYV36E − 1000 V BYV36F − 1200 V BYV36G − 1400 V IF(AV) average forward current T tp=6 0°C; lead length = 10 mm; see Figs 2; 3 and 4 averaged over any 20 ms period; see also Figs 14; 15 and 16 BYV36A to C − 1.6 A BYV36D and E − 1.5 A BYV36F and G − 1.5 A I F(AV) average forward current T amb =6 0°C; PCB mounting (see Fig.25); see Figs 5; 6 and 7 averaged over any 20 ms period; see also Figs 14; 15 and 16 BYV36A to C − 0.87 A BYV36D and E − 0.81 A BYV36F and G − 0.81 A

1996 Jul 01 3

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise speciﬁed. IFRM repetitive peak forward current Ttp=6 0°C; see Figs 8; 9 and 10 BYV36A to C − 18 A BYV36D and E − 17 A BYV36F and G − 15 A IFRM repetitive peak forward current Tamb =6 0°C; see Figs 11; 12 and 13 BYV36A to C − 9A BYV36D and E − 8A BYV36F and G − 8A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T j max prior to surge; VR =V RRMmax − 30 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj=T j max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 17 and 18 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage I F = 1 A; Tj=T j max; see Figs 19; 20 and 21BYV36A to C −− 1.00 V BYV36D and E −− 1.05 V BYV36F and G −− 1.05 V VF forward voltage I F =1A ; see Figs 19; 20 and 21BYV36A to C −− 1.35 V BYV36D and E −− 1.45 V BYV36F and G −− 1.45 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV36A 300 −− V BYV36B 500 −− V BYV36C 700 −− V BYV36D 900 −− V BYV36E 1100 −− V BYV36F 1300 −− V BYV36G 1500 −− V IR reverse current V R =V RRMmax ; see Fig.22 −− 5 µA VR =V RRMmax ; Tj= 165°C; see Fig.22 −− 150 µA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

1996 Jul 01 4

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig.25. For more information please refer to the“General Part of associated Handbook”. trr reverse recovery time when switched from IF = 0.5 A to IR =1A ; measured at IR = 0.25 A; see Fig. 26 BYV36A to C −− 100 ns BYV36D and E −− 150 ns BYV36F and G −− 250 ns C d diode capacitance f = 1 MHz; V R =0V ; see Figs 23 and 24BYV36A to C − 45 − pF BYV36D and E − 40 − pF BYV36F and G − 35 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt =−1A /µs; see Fig.27 BYV36A to C −− 7A / µs BYV36D and E −− 6A / µs BYV36F and G −− 5A / µs SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W R th j-a thermal resistance from junction to ambient note 1 100 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dIR

1996 Jul 01 5

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series GRAPHICAL DATA BYV36A to C a = 1.42; VR =V RRMmax ;δ = 0.5. Switched mode application. Fig.2 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). 0 200 1.6 MSA867 0.4

100 T tp ( C)o

IF(AV) (A) 0.8 1.2 20 15 10 lead length (mm) BYV36D and E a = 1.42; VR =V RRMmax ;δ = 0.5. Switched mode application. Fig.3 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). 0 200 1.6 MSA866 0.4 IF(AV) (A) 0.8 1.2 20 15 10 lead length (mm) BYV36F and G a = 1.42; VR =V RRMmax ;δ = 0.5. Switched mode application. Fig.4 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 200 2.0 0.4 1.6 MBD419 100 IF(AV) (A) T ( C)o tp 0.8 1.2 lead length 10 mm BYV36A to C a = 1.42; VR =V RRMmax ;δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. Fig.5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 1.2 MSA865 0.4

100 T ( C)o

IF(AV) (A) amb 0.8

1996 Jul 01 6

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series BYV36D and E a = 1.42; VR =V RRMmax ;δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. Fig.6 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 1.2 MSA864 0.4 IF(AV) (A) amb 0.8 BYV36F and G a = 1.42; VR =V RRMmax ;δ = 0.5. Device mounted as shown in Fig.25. Switched mode application. Fig.7 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 0.4 MBD420 100 IF(AV) (A) 0.8 1.2 T ( C)o amb Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYV36A to C Ttp=6 0°C; Rth j-tp= 46 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 600 V. 10 2 11 0 1 0 2 10 3 10 4 MBD446 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5

1996 Jul 01 7

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYV36D and E Ttp=6 0°C; Rth j-tp= 46 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1000 V. 10 2 11 0 1 0 2 10 3 10 4 MBD447 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5 BYV36F and G Ttp=6 0°C; Rth j-tp= 46 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1400 V. Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 10 2 11 0 1 0 2 10 3 10 4 MLB529 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5

1996 Jul 01 8

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYV36A to C Tamb =6 0°C; Rth j-a= 100 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 600 V. 10 2 11 0 1 0 2 10 3 10 4 MBD441 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5 Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYV36D and E Tamb =6 0°C; Rth j-a= 100 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1000 V. 10 2 11 0 1 0 2 10 3 10 4 MBD444 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5

1996 Jul 01 9

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYV36F and G Tamb =6 0°C; Rth j-a= 100 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1400 V. 10 2 11 0 1 0 2 10 3 10 4 MLB530 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5 Fig.14 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. BYV36A to C a=I F(RMS) /IF(AV); VR =V RRMmax ;δ = 0.5. P (W) MSA861

1 IF(AV)(A)

a = 3 2.5 2 1.57 1.42 BYV36D and E a=I F(RMS) /IF(AV); VR =V RRMmax ;δ = 0.5. Fig.15 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. P (W) MSA862 a = 3 2.5 2 1.57 1.42

1996 Jul 01 10

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series BYV36F and G a=I F(RMS) /IF(AV); VR =V RRMmax ;δ = 0.5. Fig.16 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MBD429

1 I (A)F(AV)

P (W) a = 3 2.5 2 1.57 1.42 Fig.17 Maximum permissible junction temperature as a function of reverse voltage. BYV36A to E Solid line = VR . Dotted line = VRRM ;δ = 0.5. handbook, halfpage200 0 400 1200 MSA857 800 100 V (V)R T j ( C)o ABCDE Fig.18 Maximum permissible junction temperature as a function of reverse voltage. BYV36F and G Solid line = VR . Dotted line = VRRM ;δ = 0.5. handbook, halfpage200 0 2000 MLB599 1000 100 V (V)R T j ( C)o FG Fig.19 Forward current as a function of forward voltage; maximum values. BYV36A to C Dotted line: Tj= 175°C. Solid line: Tj=2 5°C. handbook, halfpage

012 VF (V) 3

(A) IF MSA863

1996 Jul 01 11

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series Fig.20 Forward current as a function of forward voltage; maximum values. BYV36D and E Dotted line: Tj= 175°C. Solid line: Tj=2 5°C. handbook, halfpage 012 4 (A) IF MLB531

3 VF (V)

Fig.21 Forward current as a function of forward voltage; maximum values. BYV36F and G Dotted line: Tj= 175°C. Solid line: Tj=2 5°C. handbook, halfpage (A) IF MBD424 Fig.22 Reverse current as a function of junction temperature; maximum values. handbook, halfpage MGC550 0 100 200 103 102 (µA) IR Tj (°C) VR =V RRMmax . BYV36A to E. f = 1 MHz; Tj=2 5°C. Fig.23 Diode capacitance as a function of reverse voltage, typical values. handbook, halfpage MSA868 10 10 2 1031 10 2 V (V)R C d (pF) BYV36A,B,C BYV36D,E

1996 Jul 01 12

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series BYV36F and G. f = 1 MHz; Tj=2 5°C. Fig.24 Diode capacitance as a function of reverse voltage, typical values. handbook, halfpage MBD436 10 10 2 10 4 10 2 V (V)R C d (pF) 10 3 Fig.25 Device mounted on a printed-circuit board. Dimensions in mm. handbook, halfpage MGA200 handbook, full pagewidth 10 Ω 1 Ω 50 Ω 25 V DUT MAM057 trr 0.5 0.5 IF (A) IR (A) t 0.25 Fig.26 Test circuit and reverse recovery time waveform and definition. Input impedance oscilloscope: 1 MΩ , 22 pF; tr ≤ 7 ns. Source impedance: 50Ω ; tr ≤ 15 ns.

1996 Jul 01 13

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series Fig.27 Reverse recovery definitions. andbook, halfpage 10% 100% dI dt t trr IF IR MGC499 F dI dt R

1996 Jul 01 14

Philips Semiconductors Product speciﬁcation Fast soft-recovery controlled avalanche rectiﬁers BYV36 series PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation. Fig.28 SOD57. Dimensions in mm. The marking band indicates the cathode. handbook, full pagewidth /#02 /#02 /#02 3.81 max MBC880 ka 28 min28 min 4.57 max 0.81 max

Product Information

BYV36A specifications and overview.

Summary

Fast soft-recovery controlled avalanche rectifiers 1996 Jul 01

Description

Fast soft-recovery controlled avalanche rectifiers 1996 Jul 01

Source title BYV36A Datasheet(PDF) - NXP Semiconductors

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