BYV34 DSK | Alldatasheet
Document overview
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Technical content
10.2± 0.2 φ 3.8± 0.15 2.8± 0.1 19.0± 0.5 PIN 3.5± 0.3 0.9± 0.1 2.5± 0.1 13.8± 0.5 2.6± 0.2 0.5± 0.1 8.9± 0.2 1.4± 0.2 4.5± 0.2 PIN 1 PIN 3 CASE PIN 2
FEATURES
Case: JEDEC TO-220A B, molded pla stic MIL-STD-202,Method 208 Mounting: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum recurrent peak reverse voltage V RRM V Maximum RMS voltage V V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current A =115 Peak forward surge current 10ms single half-sine-wave superimposed on rated load Maximum instantaneous @IF=10A,TJ=150 V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical thermal resistance (Note2) R θJA K/W Operating junction temperature range T J Storage temperature range T STG 120 A A BYV34---SERIES - 55 ----- + 150 SUPER FAST RECTIFIERS VOLTAGE RANGE: 300 - 500 V CURRENT: 20 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS TO - 220AB Low forward voltage drop High current capability I F(AV) UNITS - 55 ----- + 150 NOTE: 1.Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Thermal resistance from junction to ambient. A 300 400 500 Easily cleaned with freon,alcohol, lsopropand Polarity: Color band de notes cathode Weight: 0.071 ounces,2.006 grams 600 Terminals: Plated leads,solderable per BYV34-300 BYV34-400 BYV34-500 300 400 500 210 280 350 I R I FSM 1.05 1.35 forward voltage @IF=20A,TJ=25 RMS Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.1 100 T J =25 Pulse Width=300 µ s 0.2 0.4 12 0 41 0 2 0 10040 T J =125 10ms Single Half Sine-Wave AMPERES AMPERES AMPERES FIG.2 -- FORWORD DERATING CURVE FIG.3 -- TYPICAL FORWORD CHARACTERISTIC FIG.4-- PEAK FORWORD SURGE CURRENT INSTANTANEOUS FORWORD VOLTAGE,VOLTS NUMBER OF CYCLES AT 50H Z BYV34---SERIES FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC CASE TEMPERATURE, SET TIME BASE FOR 25 ns/cm INSTANTANEOUS FORWORD CURRENT AVERAGE FORWARD CURRENT NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 PEAK FORWORD SURGE CURRENT 12575 1005025 150 Single Phase Half Wave 50H z Resistive or Inductive Load PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) -1.0A -0.25A +0 .5A t rr 1cm www.diode.kr Diode Semiconductor Korea