BYV32E-200 ISC | Alldatasheet
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Technical content
FastRecoveryRectifierDiode www.iscsemi.com 1
DESCRIPTION
- Superfastswitchingforhigh efficiency
- Lowreverseleakage
- High forwardsurge currentcapability
- RoHsProduct
APPLICATIONS
- Mainlyusedin switching power supply
- PWMpulse widthmodulator
- inverteras afreewheelingand otherelectronic circuits
- high-frequencyrectifier diode
- diode ordamping diodeuse ABSOLUTE MAXIMUM RATINGS (TC=25℃) SYMBOL PARAMETER VALUE UNIT VRSM Max. non-repetitivereverseblockingvoltage 200 V VRRM Max. repetitivereverseblockingvoltage 200 V IFAV AverageRectifiedForwardCurrent (RatedVR-20KhzSquareWave)-50%dutycycle 20 A IFSM Surgenonrepetitiveforwardcurrenttp=10mssinusoidal 80*2 A Rthj-c TypicalThermalResistance(perleg) 2.4 ℃/W TJ JunctionTemperature -40~175 ℃ Tstg StorageTemperatureRange -40~175 ℃
FastRecoveryRectifierDiode www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage V IR Reversecurrent uA PACKAGEOUTLINE(UNIT:MM):
FastRecoveryRectifierDiode www.iscsemi.com 3 ProductDisclaimer ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISCmakes no warrantyor guaranteeregardingthe suitabilityof itsproducts forany particularpurpose, nordoes ISCassumeany liability arisingfromthe application oruse ofany products,and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages.