BYV32

BYV32 PHILIPS | Alldatasheet

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Technical content

Philips Semiconductors Product specification Rectifier diodes BYV32 series ultrafast GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dualSYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope, featuring low forward voltage drop, BYV32- 100 150 200 ultra-fast recovery times and soft VRRM Repetitive peak reverse 100 150 200 V recovery characteristic. They are voltage intended for use in switched mode VF Forward voltage 0.85 0.85 0.85 V power supplies and high frequency IO(AV) Output current (both 20 20 20 A circuits in general where low diodes conducting) conduction and switching losses are trr Reverse recovery time 25 25 25 ns essential. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -100 -150 -200 VRRM Repetitive peak reverse voltage - 100 150 200 V VRWM Crest working reverse voltage - 100 150 200 V VR Continuous reverse voltage - 100 150 200 V IO(AV) Output current (both diodes square wave - 20 A conducting)1 δ = 0.5; Tmb ≤ 115 ˚C sinusoidal - 18 A a = 1.57; Tmb ≤ 118 ˚C IO(RMS) RMS forward current - 28 A IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A per diode T mb ≤ 115 ˚C IFSM Non-repetitive peak forward t = 10 ms - 125 A current per diode t = 8.3 ms - 137 A sinusoidal; with reapplied VRWM(max) I2t I 2t for fusing t = 10 ms - 78 A 2s Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C 1 2 3 tab k a1 a2

1 Neglecting switching and reverse current losses

October 1994 1 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV32 series ultrafast THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to per diode - - 2.4 K/W mounting base both diodes conducting - - 1.6 K/W R th j-a Thermal resistance junction to in free air - 60 - K/W ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage (per diode) IF = 8 A; Tj = 150˚C - 0.72 0.85 V IF = 20 A - 1.00 1.15 V IR Reverse current (per diode) VR = VRWM ; Tj = 100 ˚C - 0.2 0.6 mA VR = VRWM - 6 30 µA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Q s Reverse recovery charge (per IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 8 12.5 nC diode) trr Reverse recovery time (per IF = 1 A; VR ≥ 30 V; - 20 25 ns diode) -dI F/dt = 100 A/µs Irrm Peak reverse recovery current IF = 1 A; VR ≥ 30 V; - 1.5 2 A (per diode) -dI F/dt = 50 A/µs; Tj = 100 ˚C Vfr Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs - 1 - V diode) October 1994 2 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV32 series ultrafast Fig.1. Definition of trr, Qs and Irrm Fig.2. Definition of Vfr Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.5. Maximum trr at Tj = 25 ˚C; per diode Fig.6. Maximum trr at Tj = 100 ˚C; per diode Q s 100%10% time dI dt F I R IF I rrm trr 0 2 4 6 8 100 1.9 2.2 2.8 BYV32 IF(AV) / A PF / W a = 1.57 Tmb(max) / C 150 145.2 140.4 135.6 130.8 126Vo = 0.7 V Rs = 0.0183 Ohms time time V F V fr V F IF trr / ns 1 10 100 1000 100 dIF/dt (A/us) IF=1A IF=10A 0 5 10 150 D = 1.0 0.5 0.2 0.1 BYV32 IF(AV) / A PF / W Tmb(max) / C 150 138 126 114Vo = 0.7 V Rs = 0.0183 Ohms D = tp tp T T t I trr / ns 1 10 100 1000 100 dIF/dt (A/us) IF=10A IF=1A Tj = 100 C October 1994 3 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV32 series ultrafast Fig.7. Maximum Irrm at Tj = 25 ˚C; per diode Fig.8. Maximum Irrm at Tj = 100 ˚C; per diode Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.10. Maximum Qs at Tj = 25 ˚C; per diode Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp). 0.1 0.01 Irrm / A 1 10 100 -dIF/dt (A/us) IF=1A IF=10A 0 1 0.5 1.5 VF / V IF / A typ max Tj=150 C Tj=25 C 0.1 0.01 IF / A 1 10 100 -dIF/dt (A/us) IF=1A IF=10A Tj = 100 C 1.0 1.0 10 100 -dIF/dt (A/us) Qs / nC IF=10A5A2A1A 100 0.1 0.01 10 s0.1 s1 ms10 us tp / s Zth (K/W) P tp t D October 1994 4 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV32 series ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.12. TO220AB; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". 10,3 max 3,7 2,8 3,03,0 max not tinned 1,3 max (2x) 1 2 3 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min October 1994 5 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV32 series ultrafast DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Rev 1.100