BYV32-50HE3 VISHAY | Alldatasheet
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BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor Revision: 02-Sep-13 1 Document Number: 88558 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common-Cathode Ultrafast Rectifier
FEATURES
- Power pack
- Glass passivated chip junction
- Ultrafast recovery time
- Low switching losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- Meets MSL level 1, per J-ST D-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package)
- AEC-Q101 qualified
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-co mpliant, commerical grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 18 A VRRM 50 V to 200 V IFSM 150 A trr 25 ns VF 0.85 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Common cathode CASE PIN 2PIN 1 PIN 3 TO-220AB BYV32 Series ITO-220AB BYVB32 Series PIN 1 PIN 2 K HEATSINK BYVF32 Series PIN 2PIN 1 PIN 3 TO-263AB 1 2 3 K MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT Maximum repetitive peak reverse voltage V RRM 50 100 150 200 V Maximum RMS voltage V RMS 35 70 105 140 V Maximum DC blocking voltage V DC 50 100 150 200 V Maximum average forward rectified current at TC = 125 °C I F(AV) 18 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Operating storage and temperature range T J, TSTG - 65 to + 150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V
BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor Revision: 02-Sep-13 2 Document Number: 88558 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Note (1) AEC-Q101 qualified ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL BYV 32-50 BYV32-100 BYV32-150 BYV32-200 UNIT Maximum instantaneous forward voltage per diode I F = 20 A T J = 25 °C VF (1) 1.15 V F = 5.0 A T J = 100 °C 0.85 Maximum DC reverse current per diode at rated DC blocking voltage T J = 25 °C IR μA TJ = 100 °C 600 Maximum reverse recovery time per diode IF = 1 A, VR = 30 V dI/dt = 100 A/μs, Irr = 10 % IRM trr 25 ns Typical junction capacitance per diode 4.0 V, 1 MHz C J 45 pF THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL BYV BYVF BYVB UNIT Typical thermal resistance from junction to case per diode R ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PAC KAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB BYV32-200-E3/45 1.85 45 50/tube Tube ITO-220AB BYVF32-200-E3/45 1.97 45 50/tube Tube TO-263AB BYVB32-200-E3/45 1.35 45 50/tube Tube TO-263AB BYVB32-200-E3/81 1.35 81 800/reel Tape and reel TO-220AB BYV32-200HE3/45 (1) 1.85 45 50/tube Tube ITO-220AB BYVF32-200HE3/45 (1) 1.97 45 50/tube Tube TO-263AB BYVB32-200HE3/45 (1) 1.35 45 50/tube Tube TO-263AB BYVB32-200HE3/81 (1) 1.35 81 800/reel Tape and reel
BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor Revision: 02-Sep-13 3 Document Number: 88558 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 0 7525 50 100 125 150 Average Forward Rectified Current (A) Case Ambient Temperature (°C) Resistive or Inductive Load 100 125 150 1 100 Number of Cycles at 50 Hz Peak Forwar d Surge Current (A) TJ = 150 °C 10 ms Single Half Sine-Wave Instantaneous Forward Current (A) 100 0.1 0.01 Instantaneous Forward Voltage (V) TJ = 125 °C TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 100 200 100 40 60 80 1000 Percent of Rated Peak Reverse Voltage (%) In stantaneou s Rever se Leakage Current (μA) TC = 25 °C TC = 100 °C 1 100 Reverse Voltage (V) Junction Capacitanc e (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor Revision: 02-Sep-13 4 Document Number: 88558 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) MAX. 0.635 (16.13) 0.625 (15.87)PIN 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 32 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ITO-220AB 0.076 (1.93) REF. 45° REF. PIN 321 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7° REF. 7° REF. 0.140 (3.56) DIA. 0.330 (8.38) TO-263AB Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) MIN. 0.15 (3.81) MIN. 0.33 (8.38) MIN. 0.42 (10.66) MIN. K K 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN.
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