BYV32-200_V01 ONSEMI | Alldatasheet

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Technical content

© Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 5

1 Publication Order Number:

BYV32−200/D BYV32-200 Switch‐mode Power Rectifier Features and Benefits

  • Low Forward V oltage
  • Low Power Loss/High Efficiency
  • High Surge Capacity
  • 175°C Operating Junction Temperature
  • 16 A Total (8 A Per Diode Leg)
  • These Devices are Pb−Free and are RoHS Compliant*

Applications

  • Power Supply − Output Rectification
  • Power Management
  • Instrumentation Mechanical Characteristics
  • Case: Epoxy, Molded
  • Epoxy Meets UL 94 V−0 @ 0.125 in
  • Weight: 1.9 Grams (Approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
  • ESD Rating: Human Body Model 3B Machine Model C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping

ORDERING INFORMATION

TO−220 CASE 221 STYLE 6 ULTRAFAST RECTIFIER

16 AMPERES, 200 VOLTS

trr = 35 ns 2, 4 MARKING DIAGRAM AYWW BYV32-200G AKA A = Assembly Location Y = Year WW = Work Week BYV32−200 = Device Code G = Pb−Free Package AKA = Diode Polarity www.onsemi.com BYV32−200G TO−220 (Pb−Free)

50 Units / Rail

BYV32−200 www.onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current, TC = 156°C Per Leg Total Device IF(AV) 8.0 A Peak Rectified Forward Current (Square Wave, 20 kHz), TC = 154°C − Per Diode Leg IFM 16 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A Operating Junction Temperature and Storage Temperature TJ, Tstg −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case Min. Pad R/C0113JC 3.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient Min. Pad R/C0113JA 60

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typical Max Unit Instantaneous Forward Voltage (Note 1) (iF = 5.0 A, Tj = 100°C) (iF = 20 A, Tj = 25°C) vF 0.74 1.01 0.85 1.15 V Instantaneous Reverse Current (Note 1) (Rated dc Voltage, Tj = 100°C) (Rated dc Voltage, Tj = 25°C) iR 3.5 600 /C0109A Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A//C0109s) (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) trr ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%

Figure 1. Typical Forward Voltage, Per Leg

80 TJ = 175°C

Figure 2. Maximum Forward Voltage Figure 3. Typical Reverse Current, Per Leg* Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg

Figure 6. Power Dissipation, Per Leg Figure 7. Typical Capacitance, Per Leg Figure 8. Thermal Response, Junction−to−Ambient

0.001 R(t) (°C/W)

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