BYV26E

BYV26 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of February 1994

1996 May 30

controlled avalanche rectifiers handbook, 2 columns M3D116

1996 May 30 2

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series

FEATURES

• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• Available in ammo-pack.

DESCRIPTION

Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka /#03/#03/#03 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYV26A − 200 V BYV26B − 400 V BYV26C − 600 V BYV26D − 800 V BYV26E − 1000 V BYV26F − 1200 V BYV26G − 1400 V VR continuous reverse voltage BYV26A − 200 V BYV26B − 400 V BYV26C − 600 V BYV26D − 800 V BYV26E − 1000 V BYV26F − 1200 V BYV26G − 1400 V IF(AV) average forward current T tp=8 5°C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 BYV26A to E − 1.00 A BYV26F and G − 1.05 A I F(AV) average forward current T amb =6 0°C; PCB mounting (see Fig.19); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 BYV26A to E − 0.65 A BYV26F and G − 0.68 A I FRM repetitive peak forward current Ttp=8 5°C; see Figs 6 and 7 BYV26A to E − 10.0 A BYV26F and G − 9.6 A

1996 May 30 3

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. IFRM repetitive peak forward current Tamb =6 0°C; see Figs 8 and 9 BYV26A to E − 6.0 A BYV26F and G − 6.4 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T j max prior to surge; VR =V RRMmax − 30 A ERSM non-repetitive peak reverse avalanche energy IR = 400 mA; Tj=T j max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 12 and 13 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage I F = 1 A; Tj=T j max; see Figs 14 and 15BYV26A to E −− 1.3 V BYV26F and G −− 1.3 V VF forward voltage I F =1A ; see Figs 14 and 15BYV26A to E −− 2.50 V BYV26F and G −− 2.15 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV26A 300 −− V BYV26B 500 −− V BYV26C 700 −− V BYV26D 900 −− V BYV26E 1100 −− V BYV26F 1300 −− V BYV26G 1500 −− V IR reverse current V R =V RRMmax ; see Fig.16 −− 5 µA VR =V RRMmax ; Tj= 165°C; see Fig.16 −− 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A ; measured at IR = 0.25 A; see Fig.20 BYV26A to C −− 30 ns BYV26D and E −− 75 ns BYV26F and G −− 150 ns C d diode capacitance f = 1 MHz; V R =0V ; see Figs 17 and 18BYV26A to C − 45 − pF BYV26D and E − 40 − pF BYV26F and G − 35 − pF SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

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Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig.19. For more information please refer to the“General Part of associated Handbook”. maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt =−1A /µs; see Fig.21 BYV26A to C −− 7A / µs BYV26D and E −− 6A / µs BYV26F and G −− 5A / µs SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W R th j-a thermal resistance from junction to ambient note 1 100 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dIR

1996 May 30 5

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series GRAPHICAL DATA handbook, halfpage 0 200 MSA855 0.5

100 T tp ( C)o

IF(AV) (A) 20 15 10 lead length (mm) BYV26A to E a = 1.42; V R =V RRMmax ;δ = 0.5. Switched mode application. Fig.2 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). BYV26F and G a = 1.42; VR =V RRMmax ;δ = 0.5. Switched mode application. Fig.3 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 200 MLB533 IF(AV) (A) lead length 10 mm handbook, halfpage 0 200 MSA856 0.5

100 T ( C)o

IF(AV) (A) amb BYV26A to E a = 1.42; VR =V RRMmax ;δ = 0.5. Device mounted as shown in Fig.19. Switched mode application. Fig.4 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage). BYV26F and G a = 1.42; VR =V RRMmax ;δ = 0.5. Device mounted as shown in Fig.19. Switched mode application. handbook, halfpage 0 200 MLB534 0.5 IF(AV) (A) amb

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Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series 10 2 10 1 11 0 1 0 2 103 104 MSA860 t (ms)p IFRM (A) = 0.05δ 0.1 0.2 0.5 BYV26A to E. Ttp=8 5°C; Rth j-tp= 46 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1000 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYV26F and G. Ttp=8 5°C; Rth j-tp= 46 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 10 2 11 0 1 0 2 10 3 10 4 MLB535 t (ms)p10 1 IFRM (A) = 0.05δ 0.1 0.2 0.5

1996 May 30 7

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series 10 2 10 1 11 0 1 0 2 103 104 MSA859 t (ms)p IFRM (A) = 0.05δ 0.1 0.2 0.5 BYV26A to E Tamb =6 0°C; Rth j-a= 100 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1000 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYV26F and G Tamb =6 0°C; Rth j-a= 100 K/W. VRRMmax during 1−δ ; curves include derating for Tj max at VRRM = 1400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 10 2 11 0 1 0 2 10 3 10 4 MLB536 t (ms)p10 1 IFRM (A) 6 = 0.05δ 0.1 0.2 0.5

1996 May 30 8

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series P (W) MSA854

0.5 IF(AV)(A)

2 1.57 1.42 a = 3 2.5 BYV26A to E a=I F(RMS) /IF(AV); VR =V RRMmax ;δ = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. BYV26F and G a=I F(RMS) /IF(AV); VR =V RRMmax ;δ = 0.5. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. P (W) MLB532 1.42 a = 3 2.5 2 1.57 BYV26A to E Solid line = VR . Dotted line = VRRM ;δ = 0.5. Fig.12 Maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage200 0 400 1200 MSA857 800 100 V (V)R T j ( C)o ABCDE BYV26F and G Solid line = V R . Dotted line = VRRM ;δ = 0.5. Fig.13 Maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage200 0 2000 MLB599 1000 100 V (V)R T j ( C)o FG

1996 May 30 9

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series BYV26A to E Dotted line: Tj= 175°C. Solid line: Tj=2 5°C. Fig.14 Forward current as a function of forward voltage; maximum values. handbook, halfpage 024 8 (A) IF MSA853 VF (V) BYV26F and G Dotted line: Tj= 175°C. Solid line: Tj=2 5°C. Fig.15 Forward current as a function of forward voltage; maximum values. handbook, halfpage 02 6 (A) IF MBD427 VF (V) Fig.16 Reverse current as a function of junction temperature; maximum values. handbook, halfpage MGC550 0 100 200 103 102 (µA) IR Tj (°C) VR =V RRMmax . BYV26A to E f = 1 MHz; Tj=2 5°C. Fig.17 Diode capacitance as a function of reverse voltage, typical values. handbook, halfpage MSA858 10 10 2 1031 10 2 V (V)R C d (pF) BYV26A,B,C BYV26D,E

1996 May 30 10

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series handbook, halfpage MBD437 10 10 2 10 4 10 2 V (V)R C d (pF) 10 3 BYV26F and G f = 1 MHz; Tj=2 5°C. Fig.18 Diode capacitance as a function of reverse voltage, typical values. Fig.19 Device mounted on a printed-circuit board. Dimensions in mm. handbook, halfpage MGA200 handbook, full pagewidth 10 Ω 1 Ω 50 Ω 25 V DUT MAM057 trr 0.5 0.5 IF (A) IR (A) t 0.25 Fig.20 Test circuit and reverse recovery time waveform and definition. Input impedance oscilloscope: 1 MΩ , 22 pF; tr ≤ 7 ns. Source impedance: 50Ω ; tr ≤ 15 ns.

1996 May 30 11

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series Fig.21 Reverse recovery definitions. ndbook, halfpage 10% 100% dI dt t trr IF IR MGC499 F dI dt R

1996 May 30 12

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV26 series PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.22 SOD57. Dimensions in mm. The marking band indicates the cathode. handbook, full pagewidth /#02 /#02 /#02 3.81 max MBC880 ka 28 min28 min 4.57 max 0.81 max