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! Diffus ed Junction ! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability M e c h a n i c a l D a t a ! Case: Molded Plastic ! T erminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum R atings and Electrical Characteristics @T A=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 1 of 2 ! Lea d Free: For RoHS / Lead Free Version pF nS V2.5 P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RM S Reverse Voltage VR(RM A verage Rectified Output Current ( N o t e 1 ) @ TA = 55°C IO 1.0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 30 A Forward V oltage @IF = 1 .0A V FM Peak Reverse Current @TA = 25° C At Rated DC Blocking Voltage @TA = 100° C IRM 5.0 150 µA Revers e Recovery Time (Note 2) trr T ypical Junction Capacitance (Note 3) C j Operat ing Temperature Range Tj -65 to +150 ° C S torage Temperature Range TST G -65 to +150 ° C BYV26B BYV26C 200 400 600 V 140 280 420 V /G01JL FA D B E SM A/DO-214AC Dim Min Max A 2.29 2.92 B 4.00 4.60 C 1.27 1.63 D 0.15 0.31 E 4.80 5.59 F 2.00 2.44 G 0.051 0.203 H 0.76 1.52 All D imensions in mm C GH Marking Code ES1D ES1G ES1J Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet
I , PEAK FORWARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current PulseWidth 8.3ms Single Half-Sine-Wave (JEDEC Method) V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 I , AVERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve A Singlephase half-wave
60 Hz resistive or inductive load
NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note1) Pulse Generator (Note2) Device Under T est trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig.5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 2 of 2 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T =
25 Cj °
= 300 sm BYV26A – BYV26C 1.0 2.0 3.0 4.0 0.01 0.1 1.0 2.0 BYV26A – BYV26C 100 1 10 100 CAPACITANCE (pF)j T = 25°C f = 1MHz j Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet