BYV26A DSK | Alldatasheet
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FEATURES
Case: JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYV26B BYV26C BYV26D UNITS M axim um recurrent peak reverse voltage V RRM 400 600 800 V Maximum RMS voltage V RMS 280 420 560 V Maximum DC blocking voltage V DC 400 600 800 V Maximum average forw ard rectified current 9.5 mm lead length, @T A =75 P eak forward surge current 10ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.0A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG BYV26A(Z) - - - BYV26E(Z) 2.5 BYV26E 1000 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS A Easily cleaned with alcohol,Isopropanol and similar solvents BYV26A - 55 ----- + 150 150.0 45 40 200 1.0 140 200 700 1000 3. Thermal resistance f rom junction to ambient. A 30.0 I R I FSM NOT E: 1. M easured w ith I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC. A 5.0 - 55 ----- + 150 100 SUPER FAST RECTIFIERS VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.0 A DO - 41 30 75 I F(AV) Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
REVERSE VOLT AGE,VOLT S BYV26A (Z)--- BYV26E(Z) AMBIENT T EMPERAT URE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS NUMBER OF CYCLES AT 50Hz FIG.1 -- FORWARD DERATING CURVE FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE, pF AVERAGE FORWARD CURRENT,AMPERES FIG.4 -- TYPICAL JUNCTION CAPACITANCE AMPERES INSTANTANEOUS FORWARD CURRENT 0.4 0 2 5 50 75 100 125 150 175 0.2 0.6 0.8 1.0 Single Phase H a lf W a v e 5 0 HZ Resistive or Inductive Load 0 .3 7 5 "(9 .5 mm )L e a d L e n g th 0.01 0.1 1.0 2.0 01 . 0 2 . 0 3. 0 4. 0 T J =25 Pulse W idth=300 µ s 1 2 4 20 10 100 40 10ms Single Half Sine-Wave 0.1 0.2 1 1020.4 4 20 40 100 100 T J =25 f=1.0MH Z Diode Semiconductor Korea www.diode.kr