BYV255V STMICROELECTRONICS | Alldatasheet

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BYV255V May 2000 - Ed : 2E HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n SUITED FOR SMPS n VERY LOW FORWARD LOSSES n NEGLIGIBLE SWITCHING LOSSES n HIGH SURGE CURRENT CAPABILITY n HIGH AVALANCHE ENERGY CAPABILITY n INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF

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Dual rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in ISOTOPTM this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ISOTOP (Plastic) Symbol Parameter Value Unit IF(RMS) RMS forward current Per diode 150 A IF(AV) Average forward currentδ = 0.5 Tc=110°C Per diode 100 A IFSM Surge non repetitive forward currenttp=10ms sinusoidal Per diode 1600 A Tstg Tj Storage and junction temperature range -4 0t o + 150 - 40 to + 150 Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V ISOTOP is a trademark of STMicroelectronics. K2 A2 A1K1

Symbol Test Conditions Min. Typ. Max. Unit IR * Tj=2 5°CV R =V RRM 100 µA Tj= 100°C 10 mA VF* * Tj= 125°CI F = 100 A 0.85 V Tj= 125°CI F = 200 A 1.00 Tj=2 5°CI F = 200 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380µs, duty cycle < 2 % ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit trr T j=2 5°CI F = 0.5A IR =1 A Irr = 0.25A 55 ns IF =1 A VR = 30V dIF/dt = -50A/µs8 0 tfr T j=2 5°CI F =1 A VFR = 1.1 x VF tr = 5 ns 10 ns VFP Tj=2 5°CI F = 1A tr = 5 ns 1.5 V RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 0.4 °C/W Total 0.25 Rth (c) Coupling 0.1 °C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCE Symbol Test Conditions Min. Typ. Max. Unit IRM Tj= 100°CI F = 100A Lp  0.05µH Vcc  0.6 VRRM dIF/dt = -200A/µs1 6 A dIF/dt = -400A/µs2 4 TURN-OFF SWITCHING CHARACTERISTICS

P=100W P=70W P=40W P=20W T IM =tp/T tp IM(A) Fig.2 :Peak current versus form factor. Tj=125 Co IFM(A) 1 10 100 1000 VFM(V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Fig.3 : Forward voltage drop versus forward current (maximum values). 0.1 1.0 0.2 0.5 Zth(j-c) (tp. ) Rth(j-c) =0.5 =0.2 =0.1 Single pulse tp(s) T =tp/T tp K Fig.4 :Relative variation of thermal impedance junction to case versus pulse duration. 0 2 04 06 08 0 1 0 0 1 2 00 100 110 120 =0.05 =0.1 =0.2 =0.5 T =tp/T tpIF(av)(A) P F(av)(W) Fig.1 :Average forward power dissipation versus average forward current. 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 00 100 120 T =tp/T tp =0.5 F(av)(A)I oTamb( C) Rth(j-a)=Rth(j-c) Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) 0.001 0.01 0.1 10 100 200 300 400 500 600 700 800 900 1000 IM(A) IM t =0.5 t(s) Tc=25 Co Tc=110 Co Tc=75 Co Fig.5 :Non repetitive surge peak forward current versus overload duration.

VR(V) F=1Mhz Tj=25 Co C(pF) Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). 10 5020 100 200 5000.1 0.2 0.5 QRR(uC) 90%CONFIDENCE IF=IF(av) Tj=100 CO dIF/dt(A/us) Fig.8 :Recovery charges versus dIF/dt. 0 25 50 75 100 125 1500.00 0.25 0.50 0.75 1.00 1.25 1.50 TYPICAL VALUES QRR;IRM[Tj]/QRR;IRM[Tj=100 Co IRM QRR Tj( C)o Fig.10 :Dynamic parameters versus junction temperature. 10 20 50 100 200 5001 90%CONFIDENCE IF=IF(av) Tj=100 CO dIF/dt(A/us) IRM(A) Fig.9 :Peak reverse current versus dIF/dt.

n Marking : Type number n Cooling method : C n Weight : 27 g n Epoxy meets UL94, V0 PACKAGE MECHANICAL DATA ISOTOP REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patentsor other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics  2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com