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Technical content

Product specification 1996 Oct 07 DISCRETE SEMICONDUCTORS BYV2100 Fast soft-recovery controlled avalanche rectifier handbook, 2 columns M3D116

1996 Oct 07 2

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100

FEATURES

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energy absorption capability
  • Available in ammo-pack.

DESCRIPTION

Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka /#03/#03/#03 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF(AV) average forward current T tp=8 0°C; lead length = 10 mm; averaged over any 20 ms period; see Fig.2; see also Fig.4 − 2.0 A T amb =6 0°C; PCB mounting (see Fig.12); averaged over any 20 ms period; see Fig.3; see also Fig.4 − 1.3 A I FRM repetitive peak forward current Ttp=8 0°C; see Fig.6 − 18 A Tamb =6 0°C; see Fig.7 − 12 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T j max prior to surge; VR =V RRMmax − 50 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj=T j max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C

1996 Oct 07 3

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer≥40 µm, see Fig.12. For more information please refer to the“General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage I F = 2 A; Tj=T j max; see Fig.5 −− 0.78 V IF = 2 A; see Fig.5 −− 0.98 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA 120 −− V IR reverse current V R =V RRMmax ; see Fig.8 −− 5 µA VR =V RRMmax ; Tj= 165°C; see Fig.8 −− 150 µA trr reverse recovery time when switched from I F = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 −− 12.5 ns C d diode capacitance f = 1 MHz; V R = 0 V; see Fig.9 − 135 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt =−1A /µs; see Fig.11 −− 2A / µs SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W R th j-a thermal resistance from junction to ambient note 1 100 K/W dIR

1996 Oct 07 4

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 GRAPHICAL DATA Switched mode application. a = 1.42;δ = 0.5; VR =V RRMmax . Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage IF(AV) (A)

200100 Ttp (°C)

Switched mode application. a = 1.42;δ = 0.5; VR =V RRMmax . Device mounted as shown in Fig.12. Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 2.0 0.4 0.8 1.2 1.6 100 MGD738 IF(AV) (A) Tamb (°C) a=I F(RMS) /IF(AV);δ = 0.5; VR =V RRMmax . Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. handbook, halfpage P (W) a = 3 2 1.42

2 IF(AV) (A) 3

2.5 1.57 Dotted line: Tj= 175°C. Solid line: Tj=2 5°C. Fig.5 Maximum forward voltage as a function of forward current. handbook, halfpage IF (A)

21 VF (V)

1996 Oct 07 5

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 Ttp=8 0°C; Rth j-tp= 46 K/W; VR =V RRMmax during 1−δ . Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 11 0 2 103 10410−2 10−1 10 MGD741 tp (ms) IFRM (A) δ = 0.05 0.1 0.2 0.5 Tamb =6 0°C; Rth j-a= 100 K/W; VR =V RRMmax during 1−δ . Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 11 0 2 103 10410−2 10−1 10 MGD742 tp (ms) IFRM (A) δ = 0.05 0.2 0.5 0.1

1996 Oct 07 6

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 VR =V RRMmax . Fig.8 Reverse current as a function of junction temperature; maximum values. handbook, halfpage MGC550 0 100 200 103 102 (µA) IR Tj (°C) f = 1 MHz; Tj=2 5°C. Fig.9 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage102 MGD743 11 0 VR (V) C d (pF) 102 Rise time oscilloscope: tr ≤ 2 ns. Turn-on time switch: t≤ 3 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. handbook, full pagewidth 50 Ω0.5 A DUT MAM282 trr 0.5 0.5 1.0 IF (A) IR (A) t 0.25

1996 Oct 07 7

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 Fig.11 Reverse recovery definitions. andbook, halfpage 10% 100% dI dt t trr IF IR MGC499 F dI dt R Fig.12 Device mounted on a printed-circuit board. Dimensions in mm. handbook, halfpage MGA200

1996 Oct 07 8

Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.13 SOD57. Dimensions in mm. The marking band indicates the cathode. handbook, full pagewidth /#02 /#02 /#02 3.81 max MBC880 ka 28 min28 min 4.57 max 0.81 max