BYV143

BYV143F PHILIPS | Alldatasheet

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Philips Semiconductors Product specification Rectifier diodes BYV143F series schottky barrier GENERAL DESCRIPTION QUICK REFERENCE DATA Dual, low leakage, platinum barrier,SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack plastic envelope, featuring low BYV143F- 35 40 45 forward voltage drop, absence of V RRM Repetitive peak reverse 35 40 45 V stored charge. and guaranteed voltage reverse surge capability. The devices VF Forward voltage 0.62 0.62 0.62 V are intended foruse in switched mode IO(AV) Average output current 20 20 20 A power supplies and high frequency (both diodes conducting) circuits in general where low conduction and zero switching losses are important. PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -35 -40 -45 VRRM Repetitive peak reverse voltage - 35 40 45 V VRWM Crest working reverse voltage - 35 40 45 V VR Continuous reverse voltage Ths ≤ 112 ˚C - 35 40 45 V IO(AV) Average output current (both square wave; δ = 0.5; - 20 A diodes conducting) T hs ≤ 87 ˚C IO(RMS) RMS output current (both - 20 A diodes conducting) IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A per diode T hs ≤ 87 ˚C IFSM Non-repetitive peak forward t = 10 ms - 100 A current, per diode t = 8.3 ms - 110 A sinusoidal T j = 125 ˚C prior to surge; with reapplied V RRM(max) I2tI 2t for fusing t = 10 ms - 50 A 2s IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 1 A per diode. IRSM Non-repetitive peak reverse tp = 100 µs- 1 A current per diode. Tstg Storage temperature -65 175 ˚C Tj Operating junction temperature - 150 ˚C 123 case k a1 a2 August 1996 1 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV143F series schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to per diode - - 5.7 K/W heatsink both diodes - - 4.8 K/W (with heatsink compound) R th j-a Thermal resistance junction to in free air. - 55 - K/W ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage (per diode) IF = 15 A; Tj = 150˚C - 0.55 0.62 V IF = 20 A - 0.76 0.80 V IR Reverse current (per diode) VR = VRRM - 10 200 µA VR = VRRM ; Tj = 125 ˚C - 10 30 mA C d Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 500 - pF diode) 125 ˚C August 1996 2 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV143F series schottky barrier Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.4. Typical reverse leakage current per diode; IR = f(VR ); parameter Tj Fig.5. Typical junction capacitance per diode; C d = f(VR ); f = 1 MHz; Tj = 25˚C to 125 ˚C. Fig.6. Transient thermal impedance; per diode; Zth j-hs = f(tp). 0 5 10 15 20 250

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IF(AV) / A PF / W Ths(max) / C 150 121.5 64.5 Rs = 0.0120 Ohms Vo = 0.4200 V 0.5 0.1 D = 1.0 0.2 T I D = tp tp T t 0 25 50 100 0.1 0.01 IR / mA VR/ V BYV143 Tj = 50 C 75 C 100 C 125 C 150 C 0 5 10 150 1.92.2 2.8 BYV143F IF(AV) / A PF / W Rs = 0.012 Ohms Vo = 0.44 V a = 1.57 Ths(max) / C 150 138.6 127.2 115.8 104.4 81.6 1 10 100 1000 100 Cd / pF VR / V PBYR745

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Tj = 25 C Tj = 150 C maxtyp 0.1 0.01 10us 1ms 0.1s 10s tp (s) Zth j-hs (K/W) P tp t D August 1996 3 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV143F series schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.7. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 seating plane 7.9 7.5 max 0.55 max 1.3 13.5 min 2.54 5.08 0.9 0.7 123 M0.4 top view 3.5 max not tinned 4.4 August 1996 4 Rev 1.100

Philips Semiconductors Product specification Rectifier diodes BYV143F series schottky barrier DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 5 Rev 1.100