BYV12 DSK | Alldatasheet
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Technical content
FEATURES
Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BYV BYV BYV
16 UNITS
Maximum recurrent peak reverse voltage V RRM 600 800 1000 V Max imum RMS v oltage V RMS 420 560 700 V Maximum DC blocking voltage V DC 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.5 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. BYV12(Z)---BYV16(Z) DO - 15 100 100 BYV Easily cleaned with Freon,Alcohol,Isopropanol 400 280 A I FSM 3. Thermal resistance from junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- +150 - 55---- +150 I R 300 60.0 5.0 100.0 1.3 VOLTAGE RANGE: 100 --- 1000 V CURRENT: 1.5 A 400 BYV 1.5 A FAST RECOVERY RECTIFIERS I F(AV) The plastic material carries U/L recognition 94V-0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
T J =125 8.3ms Single Half Sine-W ave 0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 100 T J =25 Pulse Width=300 µ S 1.8 2.0 8000 0.2 40 20 60 160120 100 140 180 0.8 0.4 0.6 1.0 1.2 1.4 1.6 Single Phase Half Wave 60Hz Resistive or Inductive Load PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) -1.0A -0.25A +0.5A t rr 1cm AMPERES CURRENT,AMPERES PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF FIG.7 --TYPICAL JUNCTION CAPACITANCE FIG.4-- PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED 2. RISE TIME = 10ns MAX. SOURCE IMPEDA NCE = 50 FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM N OTE S: 1. RISE TIM E = 7ns M AX. INP UT IM P E D ANC E = 1M . 22P F SE T TIM E BASE FOR 50/100 ns /cm FIG.2 --TYPICAL FORWARD CHARACTERISTIC NUMBER OF CYCLES AT 60Hz REVERSE VOLT AGE,VOLT S BYV12(Z)---BYV16(Z) INSTANTANEOUS FORWARD CURRENT FIG.3-- FORWARD DERATING CURRENT INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT TEMPERATURE, .1 1.0 100 200 4 10 20 40 100.2 .4 2 T J =25 f=1M Hz www.diode.kr Diode Semiconductor Korea