BYV10-60 STMICROELECTRONICS | Alldatasheet
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Technical content
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon rectifier diode in glass case featu- ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. August 1999 Ed: 1A DO 41 (Glass) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 60 V IF(AV) Average Forward Current* Tamb = 25 °C 1A IFSM Surge non Repetitive Forward Current Tamb = 25°C tp = 10ms Sinusoidal Pulse A Tamb = 25°C tp = 300µs Rectangular Pulse Tstg Tj Storage and Junction T emperature Range - 65 to + 150 - 65 to + 125 TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-a) Junction-ambient* 110 °C/W * On infinite heatsink with 4mm lead length THERMAL RESISTANCE
Figure 7. Surge non repetitive forward current Marking: clear, ring at cathode end. change without notice. This publication supersedes and replaces all information previously supplied. © 1999 STMicroelectronics - Printed in Italy - All rights reserved. Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.