BYV10-40 STMICROELECTRONICS | Alldatasheet
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Technical content
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
Metal to silicon rectifier diodes in glass case featu- ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. August 1998 Ed : 1A DO 41 (Glass) Symbol Parameter Value Unit IF(AV) Average Forward Current* Tamb = 60 °C 1A IFSM Surge non Repetitive Forward Current Tamb = 25°C tp = 10ms Sinusoidal Pulse A Tamb = 25°C tp = 300µs Rectangular Pulse Tstg Tj Storage and Junction T emperature Range - 65 to + 150 - 65 to + 125 TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 °C ABSOLUTE RATINGS (limiting values) Symbol Parameter BYV 10-40 Unit VRRM Repetitive Peak Reverse Voltage 40 V * On infinite heatsink with 4mm lead length Symbol Test Conditions Value Unit R th(j-a) Junction-ambient* 110 °C/W * On infinite heatsink with 4mm lead length THERMAL RESISTANCE
Symbol Test Conditions Min. Typ. Max. Unit IR * Tj = 25°C VR = VRRM 0.5 mA Tj = 100°C 10 VF *I F = 1A Tj = 25°C 0.55 V IF = 3A 0.85 STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit C Tj = 25°C V R = 0 220 pF DYNAMIC CHARACTERISTICS * Pulse test: tp ≤ 300µs δ < 2% . Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes. Nevertheless, when the device switches from for- ward biased condition to reverse blocking state, current is required to charge the depletion capaci- tance of the diode. This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit be- haviour analysis may be performed assuming that Schottky rectifier consists of an ideal diode in pa- rallel with a variable capacitance equal to the junc- tion capacitance (see fig. 5 page 4/4). Fig.1 : Forward current versus forward voltage at low level (typical values). Fig.2 : Forward current versus forward voltage at high level (typical values). BYV 10-40
Fig.3 : Reverse current versus junction temperature. Fig.4 : Reverse current versus VRRM in per cent. Fig.5 : Capacitance C versus reverse applied voltage V R (typical values). Fig.6 : Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms. BYV 10-40
Figure 7. Surge non repetitive forward current Marking: clear, ring at cathode end. change without notice. This publication supersedes and replaces all information previously supplied. © 1999 STMicroelectronics - Printed in Italy - All rights reserved. Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.