BYS13-90 TAYCHIPST | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
90V 1.5A 1 of 2 Web Site: www.taychipst.com
FEATURES
E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS /C0068High efficiency /C0068Low forward voltage drop /C0068Negligible switching losses /C0068Low reverse current /C0068High reverse surge capability /C0068High ESD capability ESD Safe – High Voltage Power Schottky – Rectifier Absolute Maximum Ratings T j = 25/C0095C Parameter Test Conditions Type Symbol Value Unit Repeptive peak reverse voltage V RRM V Continuous reverse voltage V R V Average forward current T j =76/C0176C, V R = 90V I FAV 1.5 A Non–repeptive surge forward current t p =10ms, half sinewave I FSM A ESD – IEC 1000–4–2 R = 330/C0087, C = 150pF ESD kV Junction and storage temperature range T j stg –55...+150 /C0176C Maximum Thermal Resistance T j = 25/C0095C Parameter Test Conditions Symbol Value Unit Junction lead T L =constant R thJL K/W Junction ambient Epoxy–glass hard tissue (see figure 1) 35/C0109m * 17mm copper area per electrode R thJA 150 K/W Epoxy–glass hard tissue (see figure 2) 35/C0109m * 50mm copper area per electrode 125
Electrical Characteristics
T j = 25/C0095C Parameter Test Conditions Type Symbol Min Max Unit I F =100mA 430 Forward voltage I F =3A V F 850 950 mV g I F =3A T j = 100/C0176C F 700 850 Reverse current V R RRM I /C0109A Reverse current V R RRM , T j =100/C0176C I R mA Junction Capacitance V R =4V, f = 1MHz C D 130 pF