BYS10-25 TAYCHIPST | Alldatasheet
Document overview
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Technical content
25V-45V 1.5A BYS10-25 THRU BYS10-45 Web Site: www.taychipst.com
FEATURES
E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS /C0068High efficiency /C0068Low power losses /C0068Very low switching losses /C0068Low reverse current /C0068High surge capability Schottky Barrier Rectifier Absolute Maximum Ratings T j = 25/C0095C Parameter Test Conditions Type Symbol Value Unit Reverse voltage BYS10–25 V R V g =Repetitive peak reverse voltage BYS10–35 R RRM V BYS10–45 V Peak forward surge current t p =10ms, half sinewave I FSM A Average forward current I FAV 1.5 A Junction and storage temperature range T j stg –55...+150 /C0176C Maximum Thermal Resistance T j = 25/C0095C Parameter Test Conditions Symbol Value Unit Junction lead T L =constant R thJL K/W Junction ambient mounted on epoxy–glass hard tissue R thJA 150 K/W mounted on epoxy–glass hard tissue, 50mm 35/C0109m Cu R thJA 125 K/W mounted on Al–oxid–ceramic (Al O ), 50mm 35/C0109m Cu R thJA 100 K/W
Electrical Characteristics
T j = 25/C0095C Parameter Test Conditions Type Symbol Min Max Unit Forward voltage I F =1A V F 500 mV Reverse current V R RRM I R 500 /C0109A V R RRM , T j =100/C0176C I R mA